Microelectromechanical system device
A microelectromechanical system (MEMS) device includes a processing die, a MEMS die and a plurality of wires. The MEMS die includes a substrate and a MEMS element. The substrate has a first surface, and the first surface includes a circuit and a plurality of first conductive contacts electrically connected with the circuit. The MEMS element has a second surface, a third surface and at least one second conductive contact, wherein the MEMS element is disposed on the first surface of the substrate with the second surface facing the substrate, and the at least one second conductive contact is disposed on the third surface of the MEMS element. The wires electrically connect the substrate and the MEMS element of the MEMS die to the processing die through the first conductive contacts and the second conductive contact respectively.
1. A microelectromechanical system device comprising:
a processing die;
a microelectromechanical system die comprising:
a substrate having a first surface, wherein the first surface comprises a circuit and a plurality of first conductive contacts electrically connected with the circuit; and
a microelectromechanical system element having a second surface, a third surface and at least one second conductive contact, wherein the microelectromechanical system element is disposed on the first surface of the substrate with the second surface facing the substrate, and the at least one second conductive contact is disposed on the third surface of the microelectromechanical system element; and
a plurality of wires electrically connecting the substrate and the microelectromechanical system element of the microelectromechanical system die to the processing die through the a plurality of first conductive contacts and the at least one second conductive contact.
2. The microelectromechanical system device according to claim 1 , wherein the substrate includes a complementary metal-oxide-semiconductor substrate.
3. The microelectromechanical system device according to claim 1 , wherein the microelectromechanical system element includes a single crystalline silicon.
4. The microelectromechanical system device according to claim 1 , wherein an airtight cavity is formed between the microelectromechanical system element and the substrate, such that the microelectromechanical system device serves as a pressure sensor.
5. The microelectromechanical system device according to claim 4 , wherein the microelectromechanical system die further comprises a supporting element disposed near a side wall of the airtight cavity.
6. The microelectromechanical system device according to claim 5 , wherein the supporting element has a wall shape, pillar shape, annular shape or arc shape.
7. The microelectromechanical system device according to claim 1 , wherein a joint between the substrate and the microelectromechanical system element is implemented by at least one of the eutectic bonding, fusion bonding, welding and adhering binding.
8. The microelectromechanical system device according to claim 1 , wherein the processing die is an application specific integrated circuit (ASIC).