Methods for memory interface calibration
Integrated circuits with memory interface circuitry may be provided. Prior to calibration, a number of samples may be determined by computing probability density function curves as a function of timing window edge asymmetry for different degrees of oversampling. During calibration, duty cycle distortion in data strobe signals may be corrected by selectively delaying the data strobe rising or falling edges. A data clock signal that is used for generating data signals may also suffer from duty cycle distortion. The rising and falling edges of the data clock signal may be selectively delayed to correct for duty cycle distortion. The data path through which the data signals are routed may be adjusted to equalize rising and falling transitions to minimize data path duty cycle distortion. Multi-rank calibration may be performed by calibrating to an intersection of successful settings that allow each memory rank to pass memory operation tests.
1. A method for calibrating a field programmable gate array, comprising:
performing, using memory interface circuitry configured to facilitate data communication between a programmable logic circuit of the field programmable gate array and multi-rank memory having a plurality of ranks, a read test for each rank of the multi-rank memory;
determining, for each rank, a range of timing settings for operating the respective rank based at least in part on the respective read test;
determining a common timing setting among the ranges of timing settings; and
configuring the memory interface circuitry using the common timing setting.
2. The method of claim 1 , wherein the memory interface circuitry is configured to communicate data and data strobe signals to the multi-rank memory, and wherein the memory interface circuitry is configured to, using the common timing setting, center the data strobe signals relative to the data signals.
3. The method of claim 1 , wherein the common timing setting comprises a delay setting.
4. The method of claim 1 , wherein the common timing setting is centered within the ranges of timing settings.
5. The method of claim 1 , wherein the method is performed during startup of the multi-rank memory.
6. The method of claim 1 , wherein the method is performed during normal operation of the memory interface circuitry.
7. The method of claim 1 , wherein performing the read test for a rank of the multi-rank memory comprises independently delaying a rising edge and a falling edge associated with a control signal.
8. The method of claim 1 , comprising:
reading, using the configured memory interface circuitry, data from the multi-rank memory.