Semiconductor structure and manufacturing method thereof
The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
1. A semiconductor structure, comprising:
a substrate;
a first die over the substrate;
a second die over the first die;
a heat spreader having a sidewall facing toward and proximal to a sidewall of the second die; and
a thermal interface material (TIM) between the sidewall of the second die and the sidewall of the heat spreader; wherein
the TIM is in contact with the sidewall of the second die and the sidewall of the heat spreader, and
a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
2. The semiconductor structure of claim 1 , wherein the TIM is between a sidewall of the first die and the sidewall of the heat spreader.
3. The semiconductor structure of claim 1 , wherein the heat spreader has a surface facing toward and proximal to a surface of the second die, the surface of the second die facing away from the substrate.
4. The semiconductor structure of claim 3 , wherein the TIM is between the surface of the second die and the surface of the heat spreader.
5. The semiconductor structure of claim 1 , wherein a surface of the second die is exposed from the heat spreader, the surface of the second die facing away from the substrate.
6. The semiconductor structure of claim 1 , wherein the first die has a surface exposed from the second die from a top view perspective, and the heat spreader has a surface facing toward and proximal to the exposed surface of the first die.
7. The semiconductor structure of claim 6 , wherein the TIM between the exposed surface of the first die and the surface of the heat spreader.
8. The semiconductor structure of claim 1 , wherein a thermal conductivity of the heat spreader is between about 150 W/mK and about 450 W/mK.
9. The semiconductor structure of claim 1 , wherein a thermal conductivity of the heat spreader is between about 370 W/mK and about 420 W/mK.
10. The semiconductor structure of claim 1 , wherein the heat spreader comprises a material selected from a group consisting of aluminum, copper, copper alloy, copper tungsten, aluminum-silicon-carbide, graphite, and aluminum silicon carbide composite.
11. The semiconductor structure of claim 1 , wherein a thermal conductivity of the TIM is between about 1 W/mK and about 10 W/mK.
12. The semiconductor structure of claim 1 , wherein a thermal conductivity of the TIM is between about 3 W/mK and about 6 W/mK.
13. The semiconductor structure of claim 1 , wherein a ratio of a thermal conductivity of the heat spreader to a thermal conductivity of the TIM is between about 15 and about 450.
14. The semiconductor structure of claim 1 , wherein a ratio of a thermal conductivity of the heat spreader to a thermal conductivity of the TIM is between about 60 and about 140.
15. The semiconductor structure of claim 1 , wherein the TIM surrounds the first die, and the heat spreader surrounds the TIM.
16. A semiconductor structure, comprising:
a substrate;
a die cube disposed over the substrate, and including a plurality of dies;
a heat spreader disposed over the substrate, surrounding and separated from the die stack; and
a thermal interface material (TIM) disposed between the die cube and the heat spreader,
wherein the TIM is in contact with a sidewall of a topmost die of the plurality of dies of the die cube and the heat spreader, and a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.
17. The semiconductor structure of claim 16 , wherein sidewalls of the plurality of dies are aligned and in contact with the TIM.