Insulated-gate bipolar transistor (IGBT) or diode including buffer region and lifetime killer region
A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.
1. A semiconductor device comprising:
a semiconductor substrate;
a first region of a first conductivity type formed on a front surface side of the semiconductor substrate;
a drift region of a second conductivity type formed closer to a rear surface of the semiconductor substrate than the first region is;
a buffer region of a second conductivity type that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has a plurality of peaks of an impurity concentration distribution that are higher than an impurity concentration of the drift region; and
a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein
a peak of a concentration distribution of the lifetime killer is arranged between a peak that is closest to a front surface of the semiconductor substrate among the plurality of peaks of the impurity concentration distribution in the buffer region, and a rear surface side of the buffer region,
the peak of the concentration distribution of the lifetime killer is within the buffer region, and
the peak of the concentration distribution of the lifetime killer is arranged at a position that does not overlap any one or more of the plurality of peaks of the impurity concentration distribution in the buffer region.
2. The semiconductor device according to claim 1 , wherein the peak of the concentration distribution of the lifetime killer is arranged closer to the rear surface of the semiconductor substrate than a peak that is closest to the rear surface of the semiconductor substrate among the plurality of peaks of the impurity concentration in the buffer region is.
3. The semiconductor device according to claim 1 , further comprising a second region of a first conductivity type formed between: a peak that is closest to the rear surface of the semiconductor substrate among the plurality of peaks of the impurity concentration distribution in the buffer region; and the rear surface of the semiconductor substrate, wherein
the peak of the concentration distribution of the lifetime killer is arranged at a position that does not overlap a peak of an impurity concentration distribution in the second region.
4. The semiconductor device according to claim 3 , wherein the peak of the concentration distribution of the lifetime killer is arranged closer to the front surface of the semiconductor substrate than the peak of the impurity concentration distribution in the second region is.
5. The semiconductor device according to claim 4 , wherein a distance between the peak of the concentration distribution of the lifetime killer and the peak of the impurity concentration distribution in the second region is greater than a distance between the peak of the concentration distribution of the lifetime killer and the peak that is closest to the rear surface of the semiconductor substrate among the plurality of peaks of the impurity concentration distribution in the buffer region.
6. The semiconductor device according to claim 1 , wherein the peak of the concentration distribution of the lifetime killer is arranged between any two of the plurality of peaks of the impurity concentration distribution in the buffer region.
7. The semiconductor device according to claim 1 , wherein the concentration distribution of the lifetime killer in a depth direction of the semiconductor substrate has a plurality of peaks including the peak of the concentration distribution of the lifetime killer.
8. The semiconductor device according to claim 1 , wherein the peak of the concentration distribution of the lifetime killer is higher than a peak that is closest to the rear surface of the semiconductor substrate among the plurality of peaks of the impurity concentration distribution in the buffer region.
9. The semiconductor device according to claim 3 , wherein the peak of the concentration distribution of the lifetime killer is lower than the peak of the impurity concentration distribution in the second region.
10. The semiconductor device according to claim 1 , wherein
protons are implanted to the buffer region, and
the lifetime killer is helium.
11. The semiconductor device according to claim 1 , wherein a full width at half maximum of the concentration distribution of the lifetime killer in a depth direction of the semiconductor substrate is equal to or greater than 5 μm.
12. The semiconductor device according to claim 6 , wherein
the plurality of peaks of the impurity concentration distribution comprises two peaks that sandwich the peak of the concentration distribution of the lifetime killer, and
a full width at half maximum of the concentration distribution of the lifetime killer is equal to or greater than 70% of an interval between the two peaks.