IP Library Granted Patent US 11,251,385
Granted Patent B2
US 11,251,385 · App. 15/880,807 · Granted Feb 15, 2022

Inexpensive, earth-abundant, tunable hole transport material for CdTe solar cells

Inventors: Randall J. Ellingson (Toledo, OH); Khagendra P. Bhandari (Toledo, OH); Michael Heben (Toledo, OH); Suneth Watthage (Toledo, OH); Zhaoning Song (Toledo, OH)
Assignee: The University of Toledo
H01L51/4213H01L27/302H01L51/424H01L51/0077H01L51/441H01L2031/0344H01L2251/301Y02E10/549
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Quick Facts
Patent No.
US 11,251,385
App. No.
15/880,807
Granted
Feb 15, 2022
Kind
B2
Abstract

Hole transport layers, electron transport layers, layer stacks, and optoelectronic devices involving perovskite materials and materials used as precursors, and methods of making the same, are described.

Claims (15)

1. An optoelectronic device comprising:

a front electrode comprising a transparent conductive oxide;

a photovoltaic heterojunction on the front electrode, wherein the photovoltaic heterojunction comprises a semiconductor absorber layer comprising CdTe on a semiconductor window layer comprising CdS;

a back electrode comprising gold on the semiconductor absorber layer;

a hole transport layer disposed between the semiconductor absorber layer and the back electrode, wherein the hole transport layer comprises a perovskite, wherein the perovskite comprises MAPbBr x I 3-x , wherein MA is methylammonium and x ranges from 0.1 to 0.9; and

copper disposed on the semiconductor absorber layer and between the semiconductor absorber layer and the hole transport layer.

2. The optoelectronic device of claim 1 , wherein x is selected from the group consisting of 0.1, 0.3, 0.5, 0.7, and 0.9.

3. The optoelectronic device of claim 1 , wherein the copper is directly on the semiconductor absorber layer, and wherein the hole transport layer is directly on the copper.

4. A layer stack comprising:

a support;

a front contact layer on the support;

a photovoltaic heterojunction on the front contact layer, wherein the photovoltaic heterojunction comprises a semiconductor window layer and a CdTe layer, wherein the CdTe layer has a Te-rich surface; and

complexes of a cadmium perovskite in solution directly on the Te-rich surface of the CdTe layer,

wherein the solution further comprises an organic halide in a solvent,

wherein the cadmium perovskite comprises MA 2 CdX 4 , and the organic halide has a formula of MAX, wherein MA is methylammonium and X is selected from the group consisting of I, Br, Cl, and F.

Assignments (2)
CONFIRMATORY LICENSE Recorded Mar 23, 2018
From: UNIVERSITY OF TOLEDO
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 045540/0944 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2018
From: ELLINGSON, RANDALL J.; BHANDARI, KHAGENDRA P.; HEBEN, MICHAEL; WATTHAGE, SUNETH; SONG, ZHAONING
To: THE UNIVERSITY OF TOLEDO
Reel/Frame 044782/0907 →
Continuity (2)
Provisional Application 62451399 · Jan 27, 2017
Related Publication 20180219166A1 · Aug 2, 2018