Method of manufacturing semiconductor device
A method of manufacturing a high quality a semiconductor device, includes loading a substrate comprising a conductive film and an insulating film into a process chamber. The insulating film is formed around the conductive film to expose the conductive film. A process gas, which comprises a component that reacts with a desorbed gas generated from the insulating film is supplied into the process chamber which causes a protective film to be selectively formed on the insulating film.
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process chamber, the substrate comprising a conductive film and an insulating film formed around the conductive film to expose the conductive film; and
(b) forming a protective film selectively on an upper surface of the insulating film without forming the protective film on the conductive film by supplying into the process chamber a process gas comprising a component reactive with a desorbed gas generated from the insulating film.
2. The method of claim 1 , wherein (b) comprises:
(b-1) supplying the process gas into the process chamber while maintaining the substrate at a first temperature to deposit on the substrate a precursor comprising the component; and
(b-2) reacting the precursor with the desorbed gas generated from the insulating film while maintaining the substrate at a second temperature higher than the first temperature after performing (b-1) to form the protective film.
3. The method of claim 2 , wherein the process chamber is provided with: a substrate support having a substrate placing surface where the substrate is placed; and an elevating unit configured to adjust a distance between the substrate and the substrate placing surface such that the substrate is spaced apart from the substrate placing surface by a first distance in (b-1) and the substrate is spaced apart from the substrate placing surface by a second distance shorter than the first distance in (b-2).
4. The method of claim 3 , wherein the component comprises a halogen.
5. The method of claim 3 , wherein the conductive film comprises an electrode and an electrode pad.
6. The method of claim 2 , wherein the component comprises a halogen.
7. The method of claim 6 , wherein the conductive film comprises an electrode and an electrode pad.
8. The method of claim 6 , further comprising: (c) forming a seed film on the protective film by a sputtering process after performing (b).
9. The method of claim 2 , wherein the conductive film comprises an electrode and an electrode pad.
10. The method of claim 9 , further comprising: (c) forming a seed film on the protective film by a sputtering process after performing (b).
11. The method of claim 2 , further comprising: (c) forming a seed film on the protective film by a sputtering process after performing (b).
12. The method of claim 1 , wherein the process chamber is provided with a microwave supply unit, and the substrate is heated by microwave supplied by the microwave supply unit.
13. The method of claim 12 , wherein the component comprises a halogen.
14. The method of claim 13 , wherein the conductive film comprises an electrode and an electrode pad.
15. The method of claim 12 , wherein the conductive film comprises an electrode and an electrode pad.
16. The method of claim 1 , wherein the component comprises a halogen.
17. The method of claim 16 , wherein the conductive film comprises an electrode and an electrode pad.
18. The method of claim 17 , further comprising: (c) forming a seed film on the protective film by a sputtering process after performing (b).
19. The method of claim 1 , wherein the conductive film comprises an electrode and an electrode pad.
20. The method of claim 19 , further comprising: (c) forming a seed film on the protective film by a sputtering process after performing (b).