Semiconductor device
A semiconductor device ( 1 ) is manufactured which includes a SiC epitaxial layer ( 28 ), a plurality of transistor cells ( 18 ) that are formed in the SiC epitaxial layer ( 28 ) and that are subjected to ON/OFF control by a predetermined control voltage, a gate electrode ( 19 ) that faces a channel region ( 32 ) of the transistor cells ( 18 ) in which a channel is formed when the semiconductor device ( 1 ) is in an ON state, a gate metal ( 44 ) that is exposed at the topmost surface for electrical connection with the outside and that is electrically connected to the gate electrode ( 19 ) while being physically separated from the gate electrode ( 19 ), and a built-in resistor ( 21 ) that is made of polysilicon and that is disposed below the gate metal ( 44 ) so as to electrically connect the gate metal ( 44 ) and the gate electron ( 19 ) together.
1. A semiconductor device comprising:
a semiconductor layer;
a control pad exposed at a topmost surface for electric connection with an outside;
a finger that extends from the control pad so as to partition a predetermined region and that is electrically connected to the control pad;
a plurality of cells that are arranged in a region partitioned by the finger in the semiconductor layer and that are subjected to ON/OFF control by means of a control voltage from the control pad;
a control electrode that faces a channel region of the cells in which a channel is formed when turned on; and
a built-in resistor that is disposed below the control pad and the finger and that connects the control pad and the finger together, the built-in resistor being made of a material that has a resistance value that is equal to or larger than the finger,
wherein the control pad is formed independently while a periphery of the control pad is surrounded by a space,
the finger includes a pad peripheral portion that surrounds the periphery of the control pad,
the built-in resistor is disposed in a region below the control pad and the pad peripheral portion with an interlayer film between (a) the built-in resistor and (b) the control pad and the pad peripheral portion, and
the built-in resistor is formed so as to straddle between the control pad and the pad peripheral portion.
2. The semiconductor device according to claim 1 , wherein the semiconductor layer is SiC semiconductor layer.
3. The semiconductor device according to claim 1 , wherein the built-in resistor is made of a metal.
4. The semiconductor device according to claim 3 , wherein the metal is made of Al.
5. The semiconductor device according to claim 3 , wherein the metal is made of AlCu.
6. The semiconductor device according to claim 3 , wherein the metal is made of Cu.
7. A semiconductor device comprising:
a semiconductor layer;
a control pad exposed at a topmost surface for electric connection with an outside;
a finger that extends from the control pad so as to partition a predetermined region and that is electrically connected to the control pad;
a plurality of cells that are arranged in a region partitioned by the finger in the semiconductor layer and that are subjected to ON/OFF control by means of a control voltage from the control pad;
a control electrode that faces a channel region of the cells in which a channel is formed when turned on; and
a built-in resistor that is disposed below the control pad and the finger and that connects the control pad and the finger together, the built-in resistor being made of a material that has a resistance value that is equal to or larger than the finger;
wherein the control pad is formed independently while a periphery of the control pad is surrounded by a space,
the built-in resistor is disposed in a region below the control pad with an interlayer film between the built-in resistor and the control pad, and
a plurality of the built-in resistors are arranged so as to be symmetrical to each other when planarly viewed from the normal direction of the semiconductor layer.
8. The semiconductor device according to claim 7 , wherein the built-in resistor is selectively disposed in a region below the control pad, and
the interlayer film is buried in a first region in which the built-in resistor is not disposed, the first region being included in the region below the control pad.
9. The semiconductor device according to claim 8 , further comprising an insulating film disposed between the built-in resistor and the semiconductor layer,
wherein a film made of an extension portion of the insulating film is disposed between the interlayer film and the semiconductor layer in the first region.
10. The semiconductor device according to claim 9 , wherein, in the semiconductor layer, an impurity region that has a concentration of 1×10 19 cm −3 or less is selectively formed in a region facing the built-in resistor with the insulating film between the region and the built-in resistor.
11. The semiconductor device according to claim 7 , wherein a wire region to which a bonding wire is connected is selectively formed on a surface of the control pad, and
the built-in resistor is selectively disposed in a region that avoids the wire region when planarly viewed from a normal direction of the semiconductor layer.
12. The semiconductor device according to claim 11 , wherein the built-in resistor is disposed below a peripheral edge of the control pad, and the wire region is formed at a middle of the control pad surrounded by the peripheral edge.
13. The semiconductor device according to claim 7 , further comprising a contact via that passes through the interlayer film and by which the control pad and the built-in resistor are electrically connected together.
14. The semiconductor device according to claim 1 , further comprising a pad-side contact via that passes through the interlayer film and by which the control pad and the built-in resister are electrically connected together, and
a cell-side contact via that passes through the interlayer film and by which the pad peripheral portion and the built-in resister are electrically connected together.
15. The semiconductor device according to claim 1 , wherein a plurality of the built-in resistors are arranged so as to be symmetrical to each other when planarly viewed from the normal direction of the semiconductor layer.
16. The semiconductor device according to claim 1 , wherein the finger is made of a metal wiring.
17. The semiconductor device according to claim 16 , wherein the metal wiring is made of Al.
18. The semiconductor device according to claim 16 , wherein the metal wiring is made of AlCu.
19. The semiconductor device according to claim 16 , wherein the metal wiring is made of Cu.