Thermal processing method and thermal processing apparatus through light irradiation
A susceptor is preheated through light irradiation by a halogen lamp before the first semiconductor wafer of a lot as a processing target is transferred into a chamber. The temperature of the susceptor is measured by a radiation thermometer. A control unit is configured to control the output of the halogen lamp so that the temperature of the susceptor reaches a stable temperature based on a result of the measurement of the temperature of the susceptor by the radiation thermometer. The stable temperature of the susceptor is the temperature of the susceptor when the temperature of the susceptor is risen to a constant temperature by continuously performing light irradiation heating on a plurality of semiconductor wafers in the chamber without heating the susceptor.
1. A thermal processing apparatus configured to heat a substrate by irradiating the substrate with light, the apparatus comprising:
a chamber housing a substrate;
a susceptor provided inside said chamber and configured to support when the substrate is placed on said susceptor;
a light irradiation unit configured to irradiate the substrate placed on said susceptor with light;
a temperature measurement unit configured to measure the temperature of said susceptor; and
a control unit configured to control said light irradiation unit so that said susceptor is heated through light irradiation by said light irradiation unit based on a result of the measurement of the temperature of said susceptor by said temperature measurement unit before the first substrate of a lot is transferred into said chamber,
wherein
when a stable temperature is set as the temperature of said susceptor when the temperature of said susceptor is risen to a constant temperature by continuously irradiating a plurality of substrates of a lot with light from said light irradiation unit to heat the substrates without heating said susceptor,
said control unit controls said light irradiation unit so that the temperature of said susceptor reaches said stable temperature.
2. The thermal processing apparatus according to claim 1 , wherein
said temperature measurement unit includes a plurality of temperature sensors configured to measure temperature at a plurality of places on said susceptor, and
said control unit controls light irradiation by said light irradiation unit for each region including one of said plurality of places.
3. The thermal processing apparatus according to claim 1 , wherein
said light irradiation unit includes a flash lamp configured to irradiate the substrate with flash light from one side of said chamber.
4. The thermal processing apparatus according to claim 3 , wherein
said light irradiation unit further includes a halogen lamp configured to irradiate the substrate with light from the other side of said chamber, and
said susceptor is heated through light irradiation by said halogen lamp.