Micro LED display device and method of fabricating the same

1. A micro light emitting diode (LED) display device, comprising:

a micro LED panel in which a plurality of micro LED pixels is arranged in rows and columns; and

a micro LED driving substrate (backplane) configured to include an active matrix (AM) circuit unit including a plurality of CMOS cells corresponding to the plurality of micro LED pixels, and a control circuit unit disposed in an outer region of the AM circuit unit,

wherein the control circuit unit is disposed to be adjacent to two sides among four sides of the micro LED panel,

wherein a first conductive metal layer serves as a common electrode of the plurality of micro LED pixels, and

wherein the first conductive metal layer is formed along an outer region of the micro LED panel, and positioned on two sides of the micro LED panel according to a layout of the control circuit unit.

2. The micro LED display device of claim 1 , further comprising:

bumps for electrically connecting the plurality of micro LED pixels and the plurality of CMOS cells.

3. The micro LED display device of claim 1 , wherein the micro LED panel is flip-chip bonded onto the micro LED driving substrate.

4. The micro LED display device of claim 1 , wherein the plurality of micro LED pixels is formed by sequentially growing a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate, and then etching at least one portion of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer,

a vertical structure of the plurality of micro LED pixels sequentially includes the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and

a portion in which the plurality of micro LED pixels is not formed corresponds to a portion in which the first conductive semiconductor layer is exposed by removing at least one portion of the active layer and the second conductive semiconductor layer.

5. The micro LED display device of claim 4 , wherein a first conductive metal layer is formed on the first conductive semiconductor layer corresponding to the portion in which the plurality of micro LED pixels is not formed, while being spaced apart from the plurality of micro LED pixels.

6. The micro LED display device of claim 5 , wherein the first conductive metal layer is formed along an outer region of the micro LED panel on the first conductive semiconductor layer.

7. The micro LED display device of claim 1 , wherein the micro LED driving substrate includes a common cell formed to face each other the first conductive metal layer, and the first conductive metal layer and the common cell are electrically connected by bumps.

8. The micro LED display device of claim 4 , wherein the first conductive type is an n-type and the second conductive type is a p-type.

9. The micro LED display device of claim 2 , wherein the bumps are formed in the plurality of CMOS cells, respectively, and are melted by heating, and

each of the plurality of CMOS cells and the micro LED pixel corresponding to each of the plurality of CMOS cells are electrically connected by the melted bumps.

10. The micro LED display device of claim 1 , wherein the control circuit unit includes at least one of a scan driving unit, a first data driving unit, a second data driving unit, a gamma voltage generating unit, a timing control unit, a scan signal monitor pad unit, a data output monitor pad unit and an interface pad unit.