Monocrystalline silicon sputtering target
A sputtering target formed from monocrystalline silicon is provided, wherein a sputter surface of the sputtering target is a plane inclined at an angle that exceeds 1° and is less than 10° from a {100} plane. The sputtering target formed from monocrystalline silicon provides a sputtering target which yields superior mechanical strength as well as exhibiting a sputter performance which is equivalent to that of a {100} plane. From a different perspective, in addition to superior mechanical strength, the monocrystalline silicon sputtering target yields superior particle characteristics, sputtering rate, crack resistance, surface shape uniformity and other characteristics.
1. A sputtering target formed from monocrystalline silicon, wherein the sputtering target has a sputter surface which is parallel to a plane inclined at an angle exceeding 1° and less than 10° from a {100} plane of the monocrystalline silicon.
2. The sputtering target according to claim 1 , wherein the sputtering target has a mean value of three-point bending strengths of 150 MPa or more, the three-point bending strengths being measured with four specimen cut in a strip form such that longer edges of the four specimen make an angle of 0°, 15°, 30°, and 45°, respectively, with a baseline contained in the sputter surface and passing through a center of the sputter surface.
3. The sputtering target according to claim 2 , wherein the three-point bending strengths contain maximum and a minimum bending strengths, and wherein a ratio of a difference between the maximum and the minimum bending strengths to a mean value of the three-point bending strengths is 4.0% or less.
4. The sputtering target according to claim 3 , wherein the plane inclined at an angle from the {100} plane of the monocrystalline silicon contains a <110> direction as an axis of rotation in making the inclination.
5. The sputtering target according to claim 4 , wherein the angle is 2° or more and 8° or less.
6. The sputtering target according to claim 5 , wherein the monocrystalline silicon contains a p-type dopant or an n-type dopant.
7. The sputtering target according to claim 6 , wherein the sputtering target has a diameter of 300 mm or more.
8. The sputtering target according to claim 7 , wherein the sputtering target has a thickness of 4 mm or more.
9. The sputtering target according to claim 3 , wherein the plane inclined at an angle from the {100} plane of the monocrystalline silicon contains a <100> direction as an axis of rotation in making the inclination.
10. The sputtering target according to claim 9 , wherein the angle is 2° or more and 8° or less.
11. The sputtering target according to claim 10 , wherein the monocrystalline silicon contains a p-type dopant or an n-type dopant.
12. The sputtering target according to claim 11 , wherein the sputtering target has a diameter of 300 mm or more.
13. The sputtering target according to claim 12 , wherein the sputtering target has a thickness of 4 mm or more.
14. The sputtering target according to claim 1 , wherein the angle is 2° or more and 8° or less.
15. The sputtering target according to claim 1 , wherein the monocrystalline silicon contains a p-type dopant or an n-type dopant.
16. The sputtering target according to claim 1 , wherein the sputtering target has a diameter of 300 mm or more.
17. The sputtering target according to claim 1 , wherein the sputtering target has a thickness of 4 mm or more.