Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.
1. A method of manufacturing a semiconductor device, comprising:
forming a first film on a substrate;
housing the substrate provided with the first film in a chamber;
introducing a first gas into the chamber;
generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber; and
introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.
2. The method of claim 1 , wherein
the substrate is housed in the chamber after a first pattern is formed on the first film, and
the metal component infiltrates into the first pattern.
3. The method of claim 1 , wherein the first gas is a noble gas.
4. The method of claim 1 , wherein the second gas is introduced into the chamber that contains a product produced from the first gas.
5. The method of claim 1 , further comprising introducing, into the chamber, a third gas that oxidizes or reduces the metal component infiltrated into the first film.
6. The method of claim 1 , wherein the first film is a film containing carbon.
7. The method of claim 1 , wherein the first film includes at least one of a photoresist film, a self-organized film, a spin on carbon film and an amorphous carbon film.
8. The method of claim 1 , wherein
the first gas is introduced into the chamber from a first gas introduction module located at a first distance from a stage that supports the substrate, and
the second gas is introduced into the chamber from a second gas introduction module located at a second distance from the stage, the second distance being smaller than the first distance.
9. The method of claim 8 , wherein the first distance is a distance deactivating a product produced from the first gas before the product arrives at the first film.
10. The method of claim 1 , wherein the chamber includes a first portion housing the substrate, and a second portion into which the first and second gases are introduced, the second portion protruding from the first portion.