Semiconductor optical device
A semiconductor optical device has a multilayer structure 30 including a first compound semiconductor layer 31 , an active layer 33 , and a second compound semiconductor layer 32 . A second electrode 42 is formed on the second compound semiconductor layer 32 through a contact layer 34 . The contact layer 34 has a thickness of four or less atomic layers. When an interface between the contact layer 34 and the second compound semiconductor layer 32 is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer 32 A which is a part of the second compound semiconductor layer in contact with the contact layer 34 is x 2 , a lattice constant along a z-axis is z 2 , a length along an x-axis in one unit of crystals constituting the contact layer 34 is x c ′, and a length along the z-axis is z c ′, (z c ′/x c ′)>(z 2 /x 2 ) is satisfied.
1. A semiconductor optical device having a multilayer structure including a first compound semiconductor layer having a first conductivity type, an active layer, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type,
wherein a first electrode is formed on the first compound semiconductor layer through a contact layer,
wherein the contact layer has a thickness of four or less atomic layers, and
wherein when an interface between the contact layer and the first compound semiconductor layer is an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layer which is a part of the first compound semiconductor layer in contact with the contact layer is x 1 , a lattice constant along a z-axis is z 1 , a length along the x-axis in one unit of crystals constituting the contact layer is x c ″, and a length along the z-axis is z c ″,
( z c ″/x c ″)>( z 1 /x 1 )
is satisfied.
2. The semiconductor optical device according to claim 1 , wherein the contact layer is pseudomorphic with respect to the interface layer of the first compound semiconductor layer.
3. The semiconductor optical device according to claim 2 , wherein when a lattice constant along an x-axis of crystals constituting the contact layer is x c and a lattice constant along a z-axis is z c ,
x 1 =x c ″<x c
and
z c ″>z c
are satisfied.
4. The semiconductor optical device according to claim 1 , wherein a crystal structure of crystals constituting the interface layer of the first compound semiconductor layer is a hexagonal system.
5. The semiconductor optical device according to claim 4 , wherein
the multilayer structure is formed of a GaN-based compound semiconductor, and
the contact layer is formed of a GaN-based compound semiconductor having the same composition as a GaN-based compound semiconductor constituting the first compound semiconductor layer, further containing an oxygen atom.
6. The semiconductor optical device according to claim 4 , wherein
the multilayer structure is formed of a GaN-based compound semiconductor, and
the contact layer is formed of a GaN-based compound semiconductor having a different composition from a GaN-based compound semiconductor constituting the first compound semiconductor layer.
7. The semiconductor optical device according to claim 1 , wherein
the multilayer structure is formed of a GaN-based compound semiconductor, and
the contact layer is formed of one material selected from the group consisting of ZnO, ZnSe, CdO, CdS, and CdSe.
8. The semiconductor optical device according to claim 1 , wherein a value of band gap energy of a compound semiconductor constituting the contact layer is smaller than that of a compound semiconductor constituting the interface layer of the first compound semiconductor layer.
9. The semiconductor optical device according to claim 1 , wherein the first electrode is formed of a transparent conductive material containing an indium atom.
10. The semiconductor optical device according to claim 1 , wherein the first conductivity type is n-type, and the second conductivity type is p-type.