Germanium-silicon light sensing apparatus
A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.
1. A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths, and a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method comprising:
forming the first group of photodiodes on a semiconductor donor wafer;
forming the second group of photodiodes on the semiconductor donor wafer, comprising:
forming, on the semiconductor donor wafer, one or more recesses for the second group of photodiodes; and
growing a germanium-silicon layer on the one or more recesses for the second group of photodiodes;
after growing the germanium-silicon layer, defining a first interconnect layer, wherein the first interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes;
defining integrated circuitry for controlling the first group of photodiodes and the second groups of photodiodes on a semiconductor carrier wafer;
after defining the integrated circuitry, defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and
bonding the first interconnect layer with the second interconnect layer, such that the first group of photodiodes and the second group of photodiodes are coupled to the integrated circuitry,
wherein the first group of photodiodes is formed from a first material, and the second group of photodiodes is formed from a second material different than the first material.
2. The method of claim 1 , wherein the growing of the germanium-silicon layer on the one or more recesses for the second group of photodiodes comprises:
growing the germanium-silicon layer by a selective epitaxial growth, such that the germanium-silicon layer is at least partially embedded in the one or more recesses.
3. The method of claim 2 , wherein the growing of the germanium-silicon layer on the one or more recesses for the second group of photodiodes further comprises:
polishing the germanium-silicon layer to planarize the germanium-silicon layer to be fully embedded in the one or more recesses.
4. The method of claim 1 , wherein the forming of the second group of photodiodes on the semiconductor donor wafer further comprises:
forming, within the one or more recesses, one or more sidewall spacers.
5. The method of claim 4 , wherein the forming of the one or more sidewall spacers comprises:
depositing, on the semiconductor donor wafer, a dielectric layer; and
performing a directional etch of the dielectric layer.
6. The method of claim 1 , further comprising:
removing at least a portion of the semiconductor donor wafer through polishing.
7. The method of claim 1 , further comprising:
forming lens elements over the image sensor array, wherein each of the lens elements is arranged to guide light to a respective photodiode of the image sensor array; and
forming wavelength filters over the image sensor array, each of the wavelength filters formed for a respective photodiode of the image sensor array.