Temperature control using temperature control element coupled to faraday shield

1. A plasma processing apparatus, comprising:

a processing chamber;

a pedestal located in the processing chamber configured to support a w orkpiece during processing;

a dielectric window forming at least a portion of the processing chamber, the dielectric window comprising a first portion and a second portion;

a first inductive coupling element and a second inductive coupling element located proximate the dielectric window, the first inductive coupling element being adjacent the first portion of the dielectric w indow and the second inductive coupling element being adjacent the second portion of the dielectric window, the first and second inductive coupling elements configured to generate a plasma in the processing chamber when energized with radio frequency (RF) energy;

a first Faraday shield located betw een the first inductive coupling element and the processing chamber;

a second Faraday shield located betw een the second inductive coupling element and the processing chamber; and

at least one temperature control element in thermal communication w ith the second Faraday shield;

wherein the at least one temperature control element comprises a thin film heating element disposed on a surface of the second Faraday shield, and w herein each of the at least one temperature control element is in direct contact with the second portion of the dielectric window and spaced apart from the first portion of the dielectric window, the thin film heating element providing a cooling path to transfer heat from the dielectric window to the second Faraday shield w hen the thin film heating element is not heated, thereby acting as a heat sink to facilitate cooling of the dielectric window.

2. The plasma processing apparatus of claim I, wherein the second Faraday shield is located between the second inductive coupling element and the second portion of the dielectric window.

3. The plasma processing apparatus of claim 1 , wherein the at least one temperature control element provides a theimally conductive path between the dielectric window and the second Faraday shield.

4. The plasma processing apparatus of claim I, wherein the thin film heating element is a polyimide thin film heating element or is a silicon rubber sheet heating element.

5. The plasma processing apparatus of claim 1 , wherein the thin film heating element has a shape that at least partially conforms to a shape of the second Faraday shield.

6. The plasma processing apparatus of claim 5 , wherein the second Faraday shield comprises one or more solid metal portions and a plurality of leaf elements, each of the plurality of leaf elements coupled to at least one of the one or more solid metal portions via at least one radial spike element, the thin film heating element comprising a plurality of leaf elements, each leaf element coupled to a ring portion via at least one radial spike element.

7. The plasma processing apparatus of claim 1 , wherein the apparatus comprises:

a first set of conductors configured to provide power to the at least one temperature control element; and

a second set of conductors, the second set of conductors associated with a temperature sensor configured to generate one or more signals indicative of a temperature associated with the at least one temperature control element.

8. The plasma processing apparatus of claim 7 , wherein at least one of the first set of conductors or the second set of conductors pass through a tube element coupled to the second Faraday shield.

9. The plasma processing apparatus of claim 1 , wherein the apparatus comprises one or more control devices configured to control the delivery of power to the at least one temperature control element based at least in part on one or more signals indicative of the temperature of the second Faraday shield.

10. A plasma processing apparatus, comprising:

a processing chamber;

a pedestal located in the processing chamber configured to support a workpiece during processing;

a dielectric window forming at least a portion of the processing chamber;

an inductive coupling element located proximate the dielectric window, the inductive coupling element configured to generate a plasma in the processing chamber when energized with radio frequency (RF) energy;

a Faraday shield located between the inductive coupling element and the processing chamber; and

at least one temperature control element in thermal communication with the Faraday shield, and

wherein the at least one temperature control element comprises a thin film heating element disposed on a surface of the Faraday shield and is in direct contact with the dielectric window, the thin film heating element providing a cooling path to transfer heat from the dielectric window to the Faraday shield when the thin film heating element is not heated, thereby acting as a heat sink to facilitate cooling of the dielectric window.