Flexible control systems and methods for device arrays
The present subject matter relates to devices, systems, and methods for controlling an array of two-state elements that can be independently positioned in either first state or a second state. A non-volatile memory in communication with the plurality of two-state elements is configured to receive an input digital control word that addresses a location within the non-volatile memory and to output one of a plurality of array control words stored at the location addressed within the memory to the plurality of two-state elements, wherein the array control word sets a predetermined combination of the plurality of two-state elements to be in the first state and in the second state, and wherein the predetermined combination of the plurality of two-state elements in the first state and in the second state optimally achieves a desired behavior of the array corresponding to the input digital control word.
1. A method for controlling an array of two-state elements that can be independently positioned in either a first state or a second state, the method comprising:
programming a non-volatile memory, wherein programming the non-volatile memory comprises:
measuring a device response in the first state and in the second state for each element in the array of two-state elements; and
for each of a plurality of input digital control words, storing one of a plurality of array control words that sets a state of each element in the array of two-state elements to optimally achieve a desired total combined activity of the array of two-state elements;
receiving an input digital control word corresponding to the desired total combined activity of the array of two-state elements;
addressing a location within the non-volatile memory based on the input digital control word, wherein the location stores the one of the plurality of array control words corresponding to a predetermined combination of the two-state elements in a first state and in a second state; and
applying the one of the plurality of array control words to the array of two-state elements to control the array to set the predetermined combination of the two-state elements to be in the first state and in the second state, wherein the predetermined combination of the two-state elements in the first state and in the second state optimally achieves the desired total combined activity of the array of two-state elements.
2. The method of claim 1 , wherein receiving the input digital control word comprises receiving a serial digital control word.
3. The method of claim 1 , wherein receiving the input digital control word comprises receiving a parallel digital control word.
4. The method of claim 1 , wherein the non-volatile memory comprises a one-time programmable memory.
5. The method of claim 1 , wherein addressing a location within the non-volatile memory comprises addressing one of a plurality of locations in the memory that are each associated with the desired total combined activity of the array of two-state elements, wherein different array control words corresponding to different states of the elements in the array are stored at the plurality of locations.
6. The method of claim 1 , wherein programming the non-volatile memory comprises providing multiple different sets of array control words that provide different array behavior corresponding to multiple different sets of input digital control words; and
wherein receiving the input digital control word comprises receiving additional address bits that identify one of the multiple different sets of array control words.
7. The method of claim 6 , wherein the multiple different sets of array control words define multiple different tuning curves.
8. The method of claim 6 , wherein the multiple different sets of array control words address discrete sub-arrays within the array of two-state elements.
9. The method of claim 1 , wherein the two-state elements comprise tunable capacitors that are each switchable between a maximum capacitance in the first state and a minimum capacitance in the second state; and
wherein the desired behavior of the array of two-state elements comprises a desired total array capacitance.
10. A tunable component comprising:
a plurality of two-state elements arranged in a functional array, wherein each of the two-state elements can be independently positioned in either a first state or a second state; and
a non-volatile memory in communication with the plurality of two-state elements, wherein the non-volatile memory is configured to receive an input digital control word that addresses a location within the non-volatile memory and to output one array control word of a plurality of array control words stored at the location addressed within the memory to the plurality of two-state elements;
wherein the one array control word sets a predetermined combination of the plurality of two-state elements to be in the first state and in the second state, wherein the predetermined combination of the plurality of two-state elements in the first state and in the second state optimally achieves a total combined activity of the array corresponding to the input digital control word; and
wherein, for each of the plurality of array control words, the predetermined combination of the plurality of two-state elements to be in the first state and in the second state is selected based at least partially on a measured device response in the first state and in the second state for each element in the plurality of two-state elements.
11. The tunable component of claim 10 , wherein the plurality of two-state elements comprises a plurality of RF switches.
12. The tunable component of claim 10 , wherein the plurality of two-state elements comprises a plurality of RF-MEMS capacitors.
13. The tunable component of claim 10 , wherein the non-volatile memory and the plurality of elements are on a common substrate.