Magneto-electric logic devices using semiconductor channel with large spin-orbit coupling
Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.
1. A magneto-electric device comprising:
a first gate contact;
a magneto-electric (ME) layer on the first gate contact;
a spin-orbit coupling (SOC) layer on the ME layer;
a dielectric layer on the SOC layer;
a second gate contact on the dielectric layer;
a first source contact on the SOC layer; and
at least one drain contact on the SOC layer.
2. The device of claim 1 , wherein the first gate contact, second gate contact, first source contact, and at least one drain contact are metal contacts.
3. The device of claim 1 , further comprising a second source contact on the SOC layer, wherein the first source contact is a right spin source contact and the second source contact is a left spin source contact.
4. The device of claim 3 , further comprising an oxide layer between the first source contact and the SOC layer and between the second source contact and the SOC layer.
5. The device of claim 3 , wherein the second gate contact comprises a ferromagnetic material.
6. The device of claim 3 , wherein the at least one drain contact comprises a ferromagnetic material.
7. The device of claim 3 , wherein the first source contact and second source contact each comprise a ferromagnetic material.
8. The device of claim 1 , wherein the magnetoelectric layer comprises Cr 2 O 3 , boron-doped Cr 2 O 3 , BiFeO 3 , LuFeO 3 , or Yb 1-x Lu x FeO 3 .
9. The device of claim 1 , wherein the SOC layer comprises WS 2 , WSe 2 , WTe 2 , In 4 Se 3 , In 4 Te 3 , HfS 3 , Mo 2 S 3 , W 2 S 3 , InP, or (Bi 1-x Sb x ) 2 Te 3 (0≤x≤1).
10. The device of claim 1 , wherein the SOC layer comprises a topological insulator.
11. The device of claim 1 , wherein the dielectric layer comprises HfO 2 , MgO, SiO 2 , Sc 2 O 3 , Gd 2 O 3 , HfO 2 or Al 2 O 3 .
12. An integrated circuit comprising a plurality of the device of claim 1 , wherein an output voltage from a first stage device is coupled to an input voltage of a next stage device.
13. A method of operating the device of claim 1 , the method comprising: writing a state to the device, wherein writing a state comprises applying a positive or negative voltage between the first gate and the second gate to direct the boundary polarization and AFM order in the ME layer, thereby polarizing spin carriers in the SOC layer.
14. A method of operating a magneto-electric device, the device comprising a first gate contact, a magneto-electric (ME) layer on the first gate contact, a spin-orbit coupling (SOC) layer on the ME layer, a dielectric layer on the SOC layer, a second gate contact on the dielectric layer, a right spin source contact on the SOC layer, a left spin source contact on the SOC layer, and at least one drain contact on the SOC layer, the method comprising:
receiving a voltage corresponding to a logical “0” or logical “1” to the right spin source contact;
receiving a voltage corresponding to a logical “0” or a logical “1” to the left spin source contact;
receiving a voltage corresponding to a logical “0” or a logical “1” to the second gate contact; and
outputting a current indicative of a logical “0” or a logical “1”.
15. The method of claim 14 , wherein:
in response to receiving the voltage corresponding to the logical “0” to the right spin source, and the voltage corresponding to the logical “0” to the left spin source, and the voltage corresponding to the logical “0” to the second gate contact, the current indicative of the logical “0” is output;
in response to receiving the voltage corresponding to the logical “1” to the right spin source, and the voltage corresponding to the logical “0” to the left spin source, and the voltage corresponding to the logical “0” to the second gate contact, the current indicative of a logic “0” is output;
in response to receiving the voltage corresponding to the logical “0” to the right spin source, and the voltage corresponding to the logical “0” to the left spin source, and the voltage corresponding to the logical “0” to the second gate contact, the current indicative of the logical “1” is output;
in response to receiving the voltage corresponding to the logical “1” to the right spin source, and the voltage corresponding to the logical “1” to the left spin source, and the voltage corresponding to the logical “0” to the second gate contact, the current indicative of the logical “1” is output;
in response to receiving the voltage corresponding to the logical “0” to the right spin source, and the voltage corresponding to the logical “0” to the left spin source, and the voltage corresponding to the logical “1” to the second gate contact, the current indicative of the logical “0” is output;
in response to receiving the voltage corresponding to the logical “1” to the right spin source, and the voltage corresponding to the logical “0” to the left spin source, and the voltage corresponding to the logical “1” to the second gate contact, the current indicative of the logical “1” is output;
in response to receiving the voltage corresponding to the logical “0” to the right spin source, and the voltage corresponding to the logical “1” to the left spin source, and the voltage corresponding to the logical “1” to the second gate contact, the current indicative of the logical “0” is output; and
in response to receiving the voltage corresponding to the logical “1” to the right spin source, and the voltage corresponding to the logical “1” to the left spin source, and the voltage corresponding to the logical “1” to the second gate contact, the current indicative of the logical “1” is output.
16. A ferroelectric-gated magneto-electric device, comprising:
a first gate contact;
a ferroelectric (FE) layer on the first gate contact;
a spin-orbit coupling (SOC) layer on the FE layer;
a dielectric layer on the SOC layer;
a second gate contact on the dielectric layer;
a source contact on the SOC layer;
a left drain contact on the SOC layer; and
a right drain contact on the SOC layer.
17. The device of claim 16 , wherein the second gate contact comprises a ferroelectric material.
18. The device of claim 16 , wherein the left drain contact and right drain contact comprise a ferromagnetic material.
19. The device of claim 16 , wherein the source contact comprises a ferromagnetic material.
20. The device of claim 16 , wherein the SOC layer comprises a 2D transitional metal dichalcogenide (TMD) or 2D transitional metal trichalcogenide (TMTC).