3D memory device
A 3D memory device, comprising a plurality of rows of strings of memory cells, each row of strings of memory cells comprising an array of strings of memory cells extending along a first direction, the rows following one another along a second direction. Each string of memory cells comprises a stack of memory cells, and the strings of memory cells of the stack extend in a third direction from a first end to a second end. A source region is provided at the second end of the strings of memory cells. Consecutive rows of strings of memory cells along the second direction are spaced apart from each other of a pitch. Between pairs of strings of a row of memory cells along the second direction there is formed a slit extending in the third direction from the first end down to the source region. The slit has dimension, along the second direction, smaller than, equal to or greater than the pitch, sufficient to the formation, in the slit, of an electrical contact to the source region.
1. A three-dimensional, 3D, memory device comprising:
a plurality of rows of strings of memory cells, each row of strings of memory cells comprising an alignment of strings of memory cells extending along a first direction, said rows following one another along a second direction, wherein each string of memory cells comprises a stack of memory cells, said strings of memory cells of the stack extending along a third direction from a first end to a second end;
a source region at the second end of the strings of memory cells;
wherein rows of strings of memory cells consecutive along said second direction are spaced apart from each other of a pitch;
wherein between pairs of said rows of strings of memory cells consecutive along said second direction a slit is formed which extend in said third direction from said first end to said source region;
and wherein said slit has size, along said second direction, less than, equal to or greater than said pitch, sufficient for the formation, in said slit, of an electrical contact to the source region, wherein said slit has size, along said second direction, substantially equal to said pitch of the rows of strings of memory cells consecutive along said second direction.
2. The 3D memory device according to claim 1 , wherein said strings of memory cells have semi-cylindrical shape with axis along said third direction.
3. The 3D memory device according to claim 1 , wherein strings of memory cells belonging to rows of strings of memory cells of said plurality consecutive along said second direction are aligned along said second direction.
4. The 3D memory device according to claim 1 , wherein strings of memory cells belonging to rows of strings of memory cells of said plurality consecutive along said second direction are arranged in “zigzag” along said second direction.
5. The 3D memory device of claim 1 , further comprising:
a plurality of word lines stacked along said third direction, wherein the plurality of word lines surrounds the strings of memory cells;
source line selectors associated to the strings of memory cells for selectively electrically connecting/disconnecting the strings of memory cells to the source region;
a plurality of bit lines extending along said second direction, and
bit line selectors stacked over the plurality of word lines, for selectively electrically connecting/disconnecting each of the strings of memory cells to a respective bit line of said plurality of bit lines.
6. The 3D memory device of claim 5 , comprising electrical contacts for the electrical contact between each of the strings of memory cells and said respective bit line of said plurality of bit lines.
7. The 3D memory device of claim 6 , wherein each bit line of said plurality of bit lines contacts respective strings of memory cells belonging to rows of strings of memory cells alternated along said second direction.
8. A three-dimensional, 3D, memory device comprising:
a plurality of rows of strings of memory cells, each row of strings of memory cells comprising an alignment of strings of memory cells extending along a first direction, said rows following one another along a second direction, wherein each string of memory cells comprises a stack of memory cells, said strings of memory cells of the stack extending along a third direction from a first end to a second end;
a source region at the second end of the strings of memory cells;
wherein rows of strings of memory cells consecutive along said second direction are spaced apart from each other of a pitch and arranged in “zigzag” along said second direction;
wherein between pairs of said rows of strings of memory cells consecutive along said second direction a slit is formed which extend in said third direction from said first end to said source region; and
wherein said slit has size, along said second direction, less than, equal to or greater than said pitch, sufficient for the formation, in said slit, of an electrical contact to the source region.