Metallic sealants in transistor arrangements
Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.
1. An integrated circuit (IC) device, comprising:
a channel material;
a source electrode and a drain electrode over the channel material; and
a sealant at least partially enclosing the source electrode or the drain electrode, wherein the sealant includes one or more metallic conductive materials and wherein an oxygen permeability coefficient of the sealant is below 10 −4 mole per millisecond Pascal or a hydrogen permeability coefficient of the sealant is below 10 −13 mole per millisecond Pascal.
2. The IC device according to claim 1 , wherein the one or more metallic conductive materials include one or more of titanium, aluminum, and tantalum and one or more of oxygen and nitrogen.
3. The IC device according to claim 1 , wherein the sealant comprises two or more layers of different metallic conductive materials.
4. The IC device according to claim 1 , wherein the sealant has a thickness between 0.5 and 100 nanometers.
5. The IC device according to claim 1 , wherein the channel material includes one or more of tin oxide, cobalt oxide, copper oxide, antimony oxide, ruthenium oxide, tungsten oxide, zinc oxide, gallium oxide, titanium oxide, indium oxide, titanium oxynitride, indium tin oxide, indium zinc oxide, nickel oxide, niobium oxide, copper peroxide, indium gallium zinc oxide, indium telluride, molybdenite, molybdenum diselenide, tungsten diselenide, tungsten disulfide, and black phosphorus.
6. The IC device according to claim 1 , wherein at least a portion of the sealant interfaces the channel material.
7. The IC device according to claim 1 , further comprising a first contact electrically connected to one of the source electrode and the drain electrode and a second contact electrically connected to another one of the source electrode and the drain electrode, the first and second contacts comprising different material(s) than the sealant.
8. The IC device according to claim 1 , wherein at least one of the source electrode and the drain electrode is between the channel material and a portion of the sealant.
9. The IC device according to claim 1 , wherein the sealant is between the channel material and at least one of the S/D electrodes.
10. The IC device according to claim 1 , wherein the sealant is over at least one sidewall of at least one of the source electrode and the drain electrode.
11. The IC device according to claim 1 , wherein the sealant wraps around at least a portion of at least one of the source electrode and the drain electrode.
12. The IC device according to claim 1 , wherein:
the IC device is a computing device that includes an IC die, and
the IC die includes the channel material, the source electrode, the drain electrode, and the sealant.
13. The IC device according to claim 12 , wherein the computing device is a wearable or handheld computing device.
14. The IC device according to claim 12 , wherein the computing device further includes one or more communication chips and an antenna.
15. A method of manufacturing an integrated circuit (IC) device, the method comprising:
providing a channel material;
providing a source electrode and a drain electrode over the channel material; and
providing a sealant at least partially enclosing the source electrode or the drain electrode, wherein at least one of:
the sealant includes one or more metallic conductive materials and an oxygen permeability coefficient of the sealant is below 10 −4 mole per millisecond Pascal, or
the sealant includes one or more metallic conductive materials and a hydrogen permeability coefficient of the sealant is below 10 −13 mole per millisecond Pascal, or
at least 80% of the sealant is amorphous and a hydrogen permeability coefficient of the sealant is above 10 −4 mole per millisecond Pascal.
16. The method according to claim 15 , wherein at least one of:
at least one of the source electrode and the drain electrode is between the channel material and a portion of the sealant,
the sealant is between the channel material and at least one of the source electrode and the drain electrode,
the sealant is over at least one sidewall of at least one of the source electrode and the drain electrode, and
the sealant wraps around at least a portion of at least one of the source electrode and the drain electrode.
17. An integrated circuit (IC) device, comprising:
a channel material;
a source electrode and a drain electrode over the channel material; and
a sealant at least partially enclosing the source electrode or the drain electrode, wherein at least 80% of the sealant is amorphous and a hydrogen permeability coefficient of the sealant is above 10 −4 mole per millisecond Pascal.
18. The IC device according to claim 17 , wherein the sealant includes one or more metallic conductive materials.
19. The IC device according to claim 17 , wherein the sealant includes one or more metallic conductive materials.
20. The IC device according to claim 17 , wherein at least one of:
the sealant is between the channel material and at least one of the source electrode and the drain electrode,
the sealant is over at least one sidewall of at least one of the source electrode and the drain electrode, and
the sealant wraps around at least a portion of at least one of the source electrode and the drain electrode.
21. The IC device according to claim 17 , wherein the channel material is a thin-film semiconductor material.
22. The IC device according to claim 17 , wherein:
the IC device is a computing device that includes an IC die, and
the IC die includes the channel material, the source electrode, the drain electrode, and the sealant.
23. The IC device according to claim 22 , wherein the computing device is a wearable or handheld computing device.
24. The IC device according to claim 22 , wherein the computing device further includes one or more communication chips and an antenna.
25. The IC device according to claim 17 , wherein at least one of the source electrode and the drain electrode is between the channel material and a portion of the sealant.