Optoelectronic device and method of producing the same
A two-terminal optoelectronic device includes a substrate having a first and a second series of grooves. A channel may transect the grooves of the first and second series of grooves. Each groove of the first and second series of grooves has a first and a second face and a cavity therebetween. The cavity is at least partially filled with a first semiconductor material. The first face is coated with a conductor material and the second face coated with a second semiconductor material. A structured surface of the substrate separates the first series of grooves from the second series of grooves to define a positive pole and a negative pole thereon. A method of producing an optoelectronic device incorporates the grooves into the surface of the substrate.
1. A device comprising:
a substrate comprising a plurality of pairs of a first series of grooves and a second series of grooves that are respectively formed within a surface of the substrate, wherein each groove of the first series of grooves and the second series of grooves has a first face and a second face separated by a cavity therebetween;
the cavity at least partially filled with a first semiconductor material;
the first face coated with a conductor material and the second face coated with a second semiconductor material;
a structured surface of the substrate separating the first series of grooves from the second series of grooves, said structured surface defining a non-conductive channel extending parallel to at least a portion of the first series of grooves and the second series of grooves; and
a positively charged area of the structured surface and a negatively charged area of the structured surface electrically insulated from each other by the non-conductive channel.
2. The device according to claim 1 , wherein the first semiconductor material and the second semiconductor material in each cavity are together an electrically active material in electrical communication with a respective positively charged area of the structured surface and a respective negatively charged area of the structured surface.
3. The device according to claim 1 , wherein the first semiconductor material is a p-type semiconductor material and the second semiconductor material is an n-type semiconductor material.