IP Library Granted Patent US 10,553,782
Granted Patent B2
US 10,553,782 · App. 15/901,142 · Granted Feb 4, 2020

Passive magnetic devices

Inventors: Andrew Arthur Ketterson (Dallas, TX); Xing Gu (Allen, TX); Yongjie Cui (Plano, TX); Xing Chen (Plainfield, IL)
Assignee: Qorvo US, Inc.
H01L43/02H01F1/015H01P1/36H01P1/38H04B7/02
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Quick Facts
Patent No.
US 10,553,782
App. No.
15/901,142
Granted
Feb 4, 2020
Kind
B2
Abstract

A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.

Claims (20)

1. A passive magnetic device comprising:

a base electrode;

multi-port signal structure comprising a central plate and at least two port tabs spaced apart from one another and extending from the central plate;

a substrate having a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure; and

a plurality of magnetic pillars within the mesh structure, wherein the plurality of magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure.

2. The passive magnetic device of claim 1 wherein the substrate and the central portion that defines the mesh structure are formed from silicon carbide.

3. The passive magnetic device of claim 1 wherein the substrate and the central portion that defines the mesh structure are formed from at least one of a group consisting of aluminum nitride and diamond.

4. The passive magnetic device of claim 1 wherein the plurality of magnetic pillars comprises at least one of a group consisting of iron, nickel, and cobalt.

5. The passive magnetic device of claim 1 wherein the plurality of magnetic pillars comprises iron.

6. The passive magnetic device of claim 1 wherein the plurality of magnetic pillars is formed from one of a group consisting of iron carbonate, an iron carbonate alloy, iron nickel, and an iron nickel alloy.

7. The passive magnetic device of claim 1 wherein the plurality of magnetic pillars comprise magnetic nanoparticles.

8. The passive magnetic device of claim 1 wherein the plurality of magnetic pillars is formed from a first material, the mesh structure is formed from a second material, and a thermal conductivity of the second material is at least five times greater than a thermal conductivity of the first material.

9. The passive magnetic device of claim 8 wherein the substrate is formed from the second material.

10. The passive magnetic device of claim 1 wherein:

the substrate and the central portion that defines the mesh structure are formed from silicon carbide; and

the plurality of magnetic pillars is formed from a first material; and

a thermal conductivity of the silicon carbide is at least five times greater than a thermal conductivity of the first material.

11. The passive magnetic device of claim 1 wherein each of the plurality of magnetic pillars are columnar-shaped and have a nominal diameter of less than 100 micrometers.

12. The passive magnetic device of claim 1 wherein the plurality of magnetic pillars comprises at least nine magnetic pillars.

13. The passive magnetic device of claim 1 wherein a volume of the plurality of magnetic pillars is greater than a volume of the mesh structure.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 25, 2019
From: GU, XING
To: TRIQUINT SEMICONDUCTOR, INC.
Reel/Frame 051101/0745 →
MERGER Recorded Nov 25, 2019
From: TRIQUINT SEMICONDUCTOR, INC.
To: QORVO US, INC.
Reel/Frame 051101/0788 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2019
From: KETTERSON, ANDREW ARTHUR; CUI, YONGJIE; CHEN, XING
To: QORVO US, INC.
Reel/Frame 051089/0317 →
Continuity (2)
Provisional Application 62461344 · Feb 21, 2017
Related Publication 20180240963A1 · Aug 23, 2018