SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING A SEMICONDUCTOR COMPONENT
A semiconductor component includes first and second connection contacts provided to electrically contact a semiconductor body, a carrier on which a semiconductor chip is arranged, the carrier including a base body including a chip mounting surface and a connection surface opposite the chip mounting surface and at least one side surface, that connects the chip mounting surface to the connection surface, a first electrically conductive contact layer electrically conductively connected to the first connection contact, and a second electrically conductive contact layer electrically conductively connected to the second connection contact, wherein the first and the second contact layer are applied to the base body and each include a first partial region arranged on the chip mounting surface, a second partial region arranged on a side surface and a third partial region arranged on the connection surface, and wherein the base body contains a radiation-transmissive base material.
1 - 17 . (canceled)
18 . A semiconductor component comprising:
a semiconductor chip comprising a semiconductor body and a first and second connection contact, wherein the first and second connection contact are provided to electrically contact the semiconductor body,
a carrier on which the semiconductor chip is arranged, the carrier comprising:
a base body comprising a chip mounting surface and a connection surface opposite the chip mounting surface and at least one side surface, that connects the chip mounting surface to the connection surface,
a first electrically conductive contact layer electrically conductively connected to the first connection contact, and a second electrically conductive contact layer electrically conductively connected to the second connection contact, wherein the first and the second contact layer are applied to the base body and each comprise a first partial region arranged on the chip mounting surface, a second partial region arranged on a side surface and a third partial region arranged on the connection surface, and wherein
the base body contains a radiation-transmissive base material.
19 . The semiconductor component according to claim 18 , wherein the second partial regions of the first and second contact layer are arranged on different side surfaces and cover between 50% and 100% of the respective side surface.
20 . The semiconductor component according to claim 18 , wherein the first partial regions of the first and second contact layer together cover at least 50% and less than 100% of the chip mounting surface.
21 . The semiconductor component according to claim 18 , wherein the third partial regions of the first and second contact layer together cover at least 50% and less than 100% of the connection surface.
22 . The semiconductor component according to claim 18 , wherein the second partial regions of the first and second contact layer are arranged on different side surfaces and cover more than 0% and less than 50% of the respective side surface.
23 . The semiconductor component according to claim 22 , wherein the first partial regions of the first and second contact layer cover more than 0% and less than 50% of the chip mounting surface.
24 . The semiconductor component according to claim 22 , wherein the third partial regions of the first and second contact layer cover more than 0% and less than 50% of the connection surface.
25 . The semiconductor component according to claim 18 , wherein the base body is free of contact elements in its interior.
26 . The semiconductor component according to claim 18 , further comprising a cover element at least partially covering surfaces of the semiconductor chip and the carrier.
27 . The semiconductor component according to claim 26 , wherein the base body and the cover element each contain or consist of at least one of glass and plastic.
28 . The semiconductor component according to claim 26 , wherein the semiconductor chip and the carrier are arranged within the cover element.
29 . A method of producing at least one semiconductor component comprising:
providing a base body unit comprising a first surface and a second surface opposite the first surface and at least one outer surface, which connects the first surface to the second surface,
structuring of the base body unit in base body elements and recesses, wherein the recesses are laterally delimited by the base body elements, and the recesses extend from the first surface through the base body unit to the second surface or end in the base body unit such that a web is arranged in each case between a recess protruding from the first surface into the base body unit and a recess protruding from the second surface into the base body unit,
forming a carrier unit by applying a contact coating to the first and second surface and to side surfaces of the base body elements, wherein the contact coating at the side surfaces comprises in each case an interruption which extends in a lateral direction,
singulating the carrier unit into a plurality of carrier elements, each comprising a base body element and a first and second contact region, wherein the first and second contact region are separated from one another by interruptions,
forming a component assembly by applying semiconductor chips to a carrier element such that their first connection contacts electrically conductively connect to the first contact region and their second connection contacts electrically conductively connect to the second contact region, and
singulating the component assembly into a plurality of semiconductor components.
30 . The method according to claim 29 , wherein, to produce the interruptions in the contact coating, the following steps are carried out:
introducing the structured base body unit with its second surface into a mold, wherein the mold comprises elevations that engage in the recesses of the base body unit and partially cover the side surfaces of the base body elements,
producing the contact coating on uncovered regions of the base body unit,
introducing the structured base body unit with its first surface into the mold, wherein the elevations engage in the recesses of the base body unit and partially cover the side surfaces of the base body elements, and
producing the contact coating on uncovered regions of the base body unit.
31 . The method according to claim 29 , wherein a shadow mask produces the interruptions, the shadow mask during the coating process covering the positions at which deposition of the contact coating is to be prevented.
32 . The method according to claim 29 , wherein the interruptions in the contact coating are produced by removing the webs.
33 . The method according to claim 29 , wherein the semiconductor component comprises a cover element and the latter is melted at its underside, wherein the cover element is fixed to the carrier after cooling.