Precharge circuit, and memory device and SRAM global counter using precharge circuit

1. A precharge circuit comprising:

a precharge time controller suitable for generating a precharge time control signal based on a detected threshold voltage of a transistor;

a precharge control signal generator suitable for generating a precharge control signal having different activation periods corresponding to a precharge time based on the precharge time control signal from the precharge time controller; and

a precharger suitable for precharging a bit line and a bit line bar based on the precharge control signal from the precharge control signal generator.

2. The precharge circuit according to claim 1 , wherein the precharge time controller comprises:

a PVT sensing circuit suitable for sensing at least one of process, voltage, and temperature (PVT) conditions applied to a memory element and generating a PVT condition sensing result signal; and

a precharge time control signal generating circuit suitable for generating the precharge time control signal based on the PVT condition sensing result signal from the PVT sensing circuit.

3. The precharge circuit according to claim 2 , wherein the PVT sensing circuit comprises:

a first NMOS transistor having a drain terminal to which a power supply voltage is applied, a gate terminal to which an enable signal is applied, and a source terminal which is coupled to a first node;

a first PMOS transistor having a source terminal which is coupled to the first node, and a gate terminal and a drain terminal to which a ground voltage is applied;

a second PMOS transistor having a source terminal to which the power supply voltage is applied, a gate terminal to which the ground voltage is applied and a drain terminal which is coupled to a second node;

a second NMOS transistor having a drain terminal which is coupled to the second node, a gate terminal which is coupled to the first node, and a source terminal which is coupled to a drain terminal of a third NMOS transistor; and

the third NMOS transistor having the drain terminal which is coupled to the source terminal of the second NMOS transistor, a gate terminal to which the enable signal is applied, and a source terminal to which the ground voltage is applied.

4. The precharge circuit according to claim 2 , wherein the precharge time control signal generating circuit comprises:

an amplification part suitable for amplifying a PVT condition sensing result signal from the PVT sensing circuit; and

a storage part suitable for storing the PVT condition sensing result signal amplified by the amplification part.

5. The precharge circuit according to claim 4 ,

wherein the amplification part comprises an inverter for inverting and amplifying the PVT condition sensing result signal from the PVT sensing circuit, and

wherein the storage part comprises a flip-flop for storing the PVT condition sensing result signal inverted and amplified by the inverter.

6. The precharge circuit according to claim 1 , wherein the precharge control signal generator generates a first precharge control signal activated during a first predetermined period in response to a first flag signal inputted from the precharge time controller, and generates a second precharge control signal activated during a second predetermined period shorter than the first predetermined period in response to a second flag signal inputted from the precharge time controller.

7. A memory device comprising:

a plurality of memory cells suitable for storing data; and

a precharge circuit suitable for precharging a selected memory cell among the plurality of memory cells with a precharge time which is varied based on a detected threshold voltage of a transistor.

8. The memory device according to claim 7 , wherein the plurality of memory cells comprises a plurality of SRAM cells.

9. The memory device according to claim 7 , wherein the precharge circuit comprises:

a precharge time controller suitable for generating a precharge time control signal based on the detected threshold voltage of the transistor;

a precharge control signal generator suitable for generating a precharge control signal activated during a predetermined period based on the precharge time control signal from the precharge time controller; and

a precharger suitable for precharging a bit line and a bit line bar during the predetermined period based on the precharge control signal from the precharge control signal generator.

10. The memory device according to claim 9 , wherein the precharge time controller comprises:

a PVT sensing circuit suitable for sensing at least one of PVT conditions applied to the plurality of memory cells and generating a PVT condition sensing result signal; and

a precharge time control signal generating circuit suitable for generating the precharge time control signal based on the PVT condition sensing result signal from the PVT sensing circuit.

11. The memory device according to claim 10 , wherein the PVT sensing circuit comprises:

a first NMOS transistor having a drain terminal to which a power supply voltage is applied, a gate terminal to which an enable signal is applied, and a source terminal which is coupled to a first node;

a first PMOS transistor having a source terminal which is coupled to the first node, and a gate terminal and a drain terminal to which a ground voltage is applied;

a second PMOS transistor having a source terminal to which the power supply voltage is applied, a gate terminal to which the ground voltage is applied and a drain terminal which is coupled to a second node;

a second NMOS transistor having a drain terminal which is coupled to the second node, a gate terminal which is coupled to the first node, and a source terminal which is coupled to a drain terminal of a third NMOS transistor; and

the third NMOS transistor having the drain terminal which is coupled to the source terminal of the second NMOS transistor, a gate terminal to which the enable signal is applied, and a source terminal to which the ground voltage is applied.

12. The memory device according to claim 10 , wherein the precharge time control signal generating circuit comprises:

an amplification part suitable for amplifying the PVT condition sensing result signal from the PVT sensing circuit; and

a storage part suitable for storing the PVT condition sensing result signal amplified by the amplification part.

13. The memory device according to claim 12 ,

wherein the amplification part comprises an inverter for inverting and amplifying the PVT condition sensing result signal from the PVT sensing circuit, and

wherein the storage part comprises a flip-flop for storing the PVT condition sensing result signal inverted and amplified by the inverter.

14. The memory device according to claim 9 , wherein the precharge control signal generator generates a first precharge control signal activated during a first predetermined in response to a first flag signal inputted from the precharge time controller, and generates a second precharge control signal activated during a second predetermined shorter than first predetermined in response to a second flag signal inputted from the precharge time controller.

15. An SRAM global counter comprising:

a counting circuit including a plurality of SRAM cells;

a precharge circuit suitable for precharging a selected SRAM cell in the counting circuit with a precharge time which is varied based on a detected threshold voltage of a transistor; and

a sense amplifier suitable for sensing the selected SRAM cell precharged by the precharge circuit.

16. The SRAM global counter according to claim 15 , wherein the precharge circuit comprises:

a precharge time controller suitable for generating a precharge time control signal based on the detected threshold voltage of the transistor;

a precharge control signal generator suitable for generating a precharge control signal activated during a predetermined period based on the precharge time control signal from the precharge time controller; and

a precharger suitable for precharging a bit line and a bit line bar during the predetermined period based on the precharge control signal from the precharge control signal generator.

17. The SRAM global counter according to claim 15 , wherein the precharge time controller comprises:

a PVT sensing circuit suitable for sensing at least one of PVT conditions applied to the plurality of SRAM cells and generating a PVT condition sensing result signal; and

a precharge time control signal generating circuit suitable for generating the precharge time control signal based on the PVT condition sensing result signal from the PVT sensing circuit.

18. The SRAM global counter according to claim 17 , wherein the PVT sensing circuit comprises:

a first NMOS transistor having a drain terminal to which a power supply voltage is applied, a gate terminal to which an enable signal is applied, and a source terminal which is coupled to a first node;

a first PMOS transistor having a source terminal which is coupled to the first node, and a gate terminal and a drain terminal to which a ground voltage is applied;

a second PMOS transistor having a source terminal to which the power supply voltage is applied, a gate terminal to which the ground voltage is applied and a drain terminal which is coupled to a second node;

a second NMOS transistor having a drain terminal which is coupled to the second node, a gate terminal which is coupled to the first node, and a source terminal which is coupled to a drain terminal of a third NMOS transistor; and

the third NMOS transistor having the drain terminal which is coupled to the source terminal of the second NMOS transistor, a gate terminal to which the enable signal is applied, and a source terminal to which the ground voltage is applied.

19. The SRAM global counter according to claim 17 , wherein the precharge time control signal generating circuit comprises:

an amplification part suitable for amplifying a PVT condition sensing result signal from the PVT sensing circuit; and

a storage part suitable for storing the PVT condition sensing result signal amplified by the amplification part.

20. The SRAM global counter according to claim 19 ,

wherein the amplification part comprises an inverter for inverting and amplifying the PVT condition sensing result signal from the PVT sensing circuit, and

wherein the storage part comprises a flip-flop for storing the PVT condition sensing result signal inverted and amplified by the inverter.