METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes: (a) processing a substrate accommodated in a process chamber by supplying an inert gas into a tank storing a precursor via a first supply pipe, supplying the precursor from an interior of the tank into the process chamber via a second supply pipe connected to the first supply pipe by a connection pipe, and exhausting the precursor from the interior of the process chamber; and (b) purging an interior of the first supply pipe, an interior of the connection pipe and an interior of the second supply pipe by alternately repeating: supplying a heated inert gas into the first supply pipe, the connection pipe and the second supply pipe, and exhausting the heated inert gas; and vacuumizing the interior of the first supply pipe, the interior of the connection pipe, and the interior of the second supply pipe.
1 . A method of manufacturing a semiconductor device, comprising:
(a) processing a substrate accommodated in a process chamber by supplying an inert gas into a tank storing a precursor via a first supply pipe, supplying the precursor from an interior of the tank into the process chamber via a second supply pipe connected to the first supply pipe by a connection pipe, and exhausting the precursor from the interior of the process chamber; and
(b) purging an interior of the first supply pipe, an interior of the connection pipe and an interior of the second supply pipe by alternately repeating:
supplying a heated inert gas into the first supply pipe, the connection pipe and the second supply pipe, and exhausting the heated inert gas; and
vacuumizing the interior of the first supply pipe, the interior of the connection pipe, and the interior of the second supply pipe.
2 . The method of claim 1 , wherein a residue containing the precursor, which adheres to and remains in at least one of the interior of the first supply pipe, the interior of the connection pipe and the interior of the second supply pipe, is removed in (b).
3 . The method of claim 1 , further comprising:
(c) purging the interior of the first supply pipe, the interior of the tank and the interior of the second supply pipe by alternately repeating:
supplying a heated inert gas into the first supply pipe, the tank and the second supply pipe, and exhausting the heated inert gas; and
vacuumizing the interior of the first supply pipe, the interior of the tank and the interior of the second supply pipe.
4 . The method of claim 3 , wherein a residue containing the precursor, which adheres to and remains in at least one of the interior of the first supply pipe, the interior of the tank and the interior of the second supply pipe, is removed in (c).
5 . The method of claim 1 , further comprising replacing the tank after (b).
6 . The method of claim 5 , wherein (b) is further performed after the act of replacing the tank.
7 . The method of claim 6 , wherein a residue containing moisture, which adheres to and remains in at least one of the interior of the first supply pipe, the interior of the connection pipe and the interior of the second supply pipe when replacing the tank, is removed in (b) performed after the act of replacing the tank.
8 . The method of claim 1 , wherein an inert gas, which is heated outside the first supply pipe, the connection pipe and the second supply pipe, is supplied into the first supply pipe, the connection pipe and the second supply pipe in (b).
9 . The method of claim 3 , wherein (c) is performed before (b).
10 . The method of claim 3 , wherein the heated inert gas, which is supplied in at least one of (b) and (c), is heated to become a temperature higher than a temperature of the inert gas supplied into the tank in (a).
11 . The method of claim 1 , wherein a third supply pipe configured to supply the heated inert gas is connected to the first supply pipe.
12 . The method of claim 1 , wherein the heated inert gas is supplied into the first supply pipe, circulated in the first supply pipe, the connection pipe and the second supply pipe, and exhausted via the interior of the process chamber, in (b).
13 . The method of claim 3 , wherein the heated inert gas is supplied into the first supply pipe, circulated in the first supply pipe, the tank and the second supply pipe, and exhausted via the interior of the process chamber, in (c).
14 . The method of claim 1 , wherein the heated inert gas is supplied into the first supply pipe, circulated in the first supply pipe, the connection pipe and the second supply pipe, and exhausted without passing through the process chamber, in (b).
15 . The method of claim 3 , wherein the heated inert gas is supplied into the first supply pipe, circulated in the first supply pipe, the tank and the second supply pipe, and exhausted without passing through the process chamber, in (c).
16 . The method of claim 1 , wherein the precursor includes a precursor in a liquid state at room temperature and atmospheric pressure, or a precursor in a liquid state obtained by dissolving a precursor in a solid state at room temperature and atmospheric pressure in a solvent.
17 . The method of claim 16 , wherein a vaporization part configured to vaporize the precursor in a liquid state is installed in the tank or the second supply pipe.
18 . The method of claim 1 , wherein (a) includes forming a film on the substrate by simultaneously or non-simultaneously performing:
supplying the precursor into the process chamber and exhausting the precursor from the interior of the process chamber; and
supplying a reactant into the process chamber and exhausting the reactant from the interior of the process chamber.
19 . A substrate processing apparatus, comprising:
a process chamber configured to accommodate a substrate;
a precursor supply system configured to supply an inert gas into a tank storing a precursor via a first supply pipe, supply the precursor from an interior of the tank into the process chamber via a second supply pipe connected to the first supply pipe by a connection pipe;
a heated inert gas supply system configured to supply a heated inert gas into the first supply pipe;
an exhaust system configured to vacuum-exhaust the interior of the process chamber; and
a controller configured to control the precursor supply system, the heated inert gas supply system and the exhaust system so as to perform:
(a) processing a substrate accommodated in the process chamber by supplying the inert gas into the tank storing the precursor via the first supply pipe, supplying the precursor from the interior of the tank into the process chamber via the second supply pipe, and exhausting the precursor from the interior of the process chamber; and
(b) purging the interior of the first supply pipe, the interior of the connection pipe and the interior of the second supply pipe by alternately repeating:
supplying a heated inert gas into the first supply pipe, the connection pipe and the second supply pipe, and exhausting the heated inert gas; and
vacuumizing the interior of the first supply pipe, the interior of the connection pipe, and the interior of the second supply pipe.
20 . A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
(a) processing a substrate accommodated in a process chamber by supplying an inert gas into a tank storing a precursor via a first supply pipe, supplying the precursor from an interior of the tank into the process chamber via a second supply pipe connected to the first supply pipe by a connection pipe, and exhausting the precursor from the interior of the process chamber; and
(b) purging an interior of the first supply pipe, an interior of the connection pipe and an interior of the second supply pipe by alternately repeating:
supplying a heated inert gas into the first supply pipe, the connection pipe and the second supply pipe, and exhausting the heated inert gas; and
vacuumizing the interior of the first supply pipe, the interior of the connection pipe, and the interior of the second supply pipe.