Integrated module with electromagnetic shielding

1. An apparatus comprising:

an integrated module comprising a module substrate with a plurality of perimeter bond pads, at least one electronic component, a mold compound, and a plurality of perimeter vertical shield contacts, wherein:

the at least one electronic component is attached to a top surface of the module substrate;

the plurality of perimeter bond pads are formed on the top surface of the module substrate, surrounding the at least one electronic component, and electrically coupled to ground;

the mold compound resides over the top surface of the module substrate and encapsulates the at least one electronic component;

a top surface of the integrated module is a top surface of the mold compound, a bottom surface of the integrated module is a bottom surface of the module substrate, and a side surface of the integrated module is a combination of a side surface of the mold compound and a side surface of the module substrate; and

each of the plurality of perimeter vertical shield contacts is bonded to a corresponding perimeter bond pad, and extends through the mold compound, such that a top tip of each of the plurality of perimeter vertical shield contacts is exposed at the top surface of the integrated module; and

a shielding structure completely covering the top surface of the integrated module and the side surface of the integrated module, and not covering the bottom surface of the integrated module, wherein the shielding structure is in contact with the plurality of perimeter vertical shield contacts.

2. The apparatus of claim 1 wherein the shielding structure comprises:

a first layer completely covering the top surface of the integrated module and the side surface of the integrated module, wherein the first layer is formed of copper, aluminum, silver, or gold; and

a second layer over the first layer and formed of nickel.

3. The apparatus of claim 2 wherein a thickness of the first layer is between 3 μm and 16 μm, and a thickness of the second layer is between 1 μm and 3 μm.

4. The apparatus of claim 1 wherein the shielding structure comprises:

a seed layer completely covering the top surface of the integrated module and the side surface of the integrated module, wherein the seed layer is formed of copper, aluminum, silver, or gold;

a first layer over the seed layer and formed of copper, aluminum, silver, or gold; and

a second layer over the first layer and formed of nickel.

5. The apparatus of claim 1 wherein the plurality of perimeter bond pads are formed from electroless nickel electroless palladium immersion gold (ENEPIG) or electroless nickel immersion gold (ENIG), and the plurality of perimeter vertical shield contacts are formed of copper, gold, or alloy.

6. The apparatus of claim 1 wherein a distance between each of the plurality of perimeter bond pads and the at least one electronic component is between 60 μm and 100 μm.

7. The apparatus of claim 1 wherein the at least one electronic component is at least one of a group consisting of a flip-chip die, a wire-bonding die, a surface mounted device (SMD), an inductor, a capacitor, and a resistor.

8. The apparatus of claim 1 wherein the at least one electronic component comprises a first electronic component and a second electronic component, wherein the plurality of perimeter bond pads surround the first electronic component and the second electronic component.

9. The apparatus of claim 8 wherein the integrated module further comprises a plurality of interior bond pads, and a plurality of interior vertical shield contacts, wherein:

the plurality of interior bond pads are formed on the top surface of the module substrate, located between the first electronic component and the second electronic component, and electrically coupled to ground;

each of the plurality of interior vertical shield contacts is bonded to a corresponding interior bond pad, and extends through the mold compound, such that a top tip of each of the plurality of interior vertical shield contacts is exposed at the top surface of the integrated module; and

the shielding structure is in contact with the plurality of interior vertical shield contacts.

10. An apparatus comprising:

an integrated module comprising a module substrate with a plurality of perimeter bond pads, a first electronic component, a second electronic component, a mold compound, and a plurality of perimeter vertical shield contacts, wherein:

the first electronic component and the second electronic component are attached to a top surface of the module substrate;

the plurality of perimeter bond pads are formed on the top surface of the module substrate, surrounding the first electronic component and the second electronic component, and electrically coupled to ground;

the mold compound resides over the top surface of the module substrate and encapsulates the first electronic component and the second electronic component;

a top surface of the integrated module is a top surface of the mold compound, a bottom surface of the integrated module is a bottom surface of the module substrate, and a side surface of the integrated module is a combination of a side surface of the mold compound and a side surface of the module substrate; and

each of the plurality of perimeter vertical shield contacts is bonded to a corresponding perimeter bond pad, and extends through the mold compound, such that a top tip of each of the plurality of perimeter vertical shield contacts is exposed at the top surface of the integrated module; and

a shielding structure completely covering the top surface of the integrated module, wherein the shielding structure is in contact with the plurality of perimeter vertical shield contacts.

11. The apparatus of claim 10 wherein the integrated module further comprises a plurality of interior bond pads, and a plurality of interior vertical shield contacts, wherein:

the plurality of interior bond pads are formed on the top surface of the module substrate, located between the first electronic component and the second electronic component, and electrically coupled to ground;

each of the plurality of interior vertical shield contacts is bonded to a corresponding interior bond pad, and extends through the mold compound, such that a top tip of each of the plurality of interior vertical shield contacts is exposed at the top surface of the integrated module; and

the shielding structure is in contact with the plurality of interior vertical shield contacts.

12. The apparatus of claim 10 wherein the shielding structure comprises:

a first layer completely covering the top surface of the integrated module, wherein the first layer is formed of copper, aluminum, silver, or gold; and

a second layer over the first layer and formed of nickel.

13. The apparatus of claim 12 wherein a thickness of the first layer is between 3 μm and 16 μm, and a thickness of the second layer is between 1 μm and 3 μm.

14. The apparatus of claim 10 wherein the shielding structure comprises:

a seed layer completely covering the top surface of the integrated module, wherein the seed layer is formed of copper, aluminum, silver, or gold;

a first layer over the seed layer and formed of copper, aluminum, silver, or gold; and

a second layer over the first layer and formed of nickel.

15. The apparatus of claim 10 wherein the plurality of perimeter bond pads are formed from electroless nickel electroless palladium immersion gold (ENEPIG) or electroless nickel immersion gold (ENIG), and the plurality of perimeter vertical shield contacts are formed of copper, gold, or alloy.

16. The apparatus of claim 10 wherein a distance between each of the plurality of perimeter bond pads and the first electronic component is between 60 μm and 100 μm, and a distance between each of the plurality of perimeter bond pads and the second electronic component is between 60 μm and 100 μm.

17. The apparatus of claim 10 wherein each of the first electronic component and the second electronic component is one of a group consisting of a flip-chip die, a wire-bonding die, a SMD, an inductor, a capacitor, and a resistor.