IP Library › Granted Patent US 10,763,296
Granted Patent B2
US 10,763,296 · App. 15/905,391 · Granted Sep 1, 2020

Biometric sensor and methods thereof

Inventors: Chin-Min Lin (Hsinchu, TW); Cheng San Chou (Hsin Chu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H01L27/14678G06K9/00H01L27/14621H01L27/14623H01L27/14625H01L27/14636H01L27/14685H01L27/3234H01L31/16H01L31/167H01L27/156H01L27/3213H01L27/3244H01L27/3281
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,763,296
App. No.
15/905,391
Granted
Sep 1, 2020
Kind
B2
Abstract

A sensing apparatus is disclosed. The sensing apparatus includes an image sensor; a collimator above the image sensor, the collimator having an array of apertures; an optical filtering layer between the collimator and the image sensor, wherein the optical filtering layer is configured to filter a portion of light transmitted through the array of apertures; and an illumination layer above the collimator.

Claims (37)

1. A sensing apparatus, comprising:

an image sensor;

a collimator above the image sensor, the collimator having an array of apertures;

an optical filtering layer between the collimator and the image sensor, wherein the optical filtering layer is configured to filter a portion of light transmitted through the array of apertures; and

an illumination layer above the collimator, wherein the illumination layer includes a plurality of light emitting pixels, wherein a portion of the plurality of light emitting pixels is configured to illuminate an object placed above the illumination layer.

2. The sensing apparatus of claim 1 , wherein the portion of light is infrared light.

3. The sensing apparatus of claim 2 , wherein the optical filtering layer includes metal oxide.

4. The sensing apparatus of claim 1 , wherein the optical filtering layer extends continuously directly under the collimator and has an opening outside of the collimator.

5. The sensing apparatus of claim 4 , further comprising:

a conductive feature coupled to the image sensor, the conductive feature extending through the opening.

6. The sensing apparatus of claim 1 , wherein the collimator is formed by bonding a wafer substrate above the optical filtering layer.

7. The sensing apparatus of claim 1 , wherein a ratio of a height of an aperture of the array of apertures to a diameter of the aperture is within a range of 10:1 to 15:1.

8. The sensing apparatus of claim 1 , wherein:

the array of apertures has a first pitch;

the plurality of light emitting pixels having a second pitch; and

the first pitch is equal to or smaller than the second pitch.

9. The sensing apparatus of claim 1 , wherein the illumination layer is an organic light emitting diodes (OLED) display.

10. The sensing apparatus of claim 1 , further comprising:

a blocking layer between the illumination layer and the collimator, wherein the blocking layer has a plurality of openings under the portion of the plurality of light emitting pixels, the opening allowing light reflected from the object to pass through.

11. A device, comprising:

a touch display panel, wherein the touch display panel includes a plurality of light emitting diodes;

a light conditioning layer under the touch display panel, wherein the light conditioning layer includes a collimator, an infrared light filter, and an anti-reflection film; and

an image sensing layer under the light conditioning layer, wherein the image sensing layer is configured to sense light emitted from the touch display panel.

12. The device of claim 11 , wherein a portion of the touch display panel is configured as a fingerprint sensing region.

13. The device of claim 11 , wherein the light emitting diodes are organic light emitting diodes (OLED).

14. The device of claim 11 , wherein the infrared light filter is between the touch display panel and the collimator.

15. The device of claim 11 , wherein the infrared light filter is between the collimator and the image sensing layer.

16. A sensing apparatus, comprising:

an image sensing layer, wherein the image sensing layer includes a plurality of optical sensing elements;

an optical filtering film above the image sensing layer;

a collimator above the optical filtering film, wherein the collimator includes a plurality of apertures;

a blocking layer above the collimator, wherein the blocking layer includes a plurality of openings; and

an illumination layer above the blocking layer, wherein the illumination layer includes a plurality of light emitting pixels.

17. The sensing apparatus of claim 16 , wherein each of the plurality of apertures of the collimator is directly above at least one of the plurality of optical sensing elements of the image sensing layer.

18. The sensing apparatus of claim 16 , wherein the plurality of openings of the blocking layer has an opening width smaller than a pixel distance of the plurality of light emitting pixels of the illumination layer.

19. The sensing apparatus of claim 16 , wherein a portion of the plurality of light emitting pixels is capable of being configured for either display function or illumination function.

20. The device of claim 11 , wherein the anti-reflection film is deposited between the infrared light filter and the image sensing layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2018
From: LIN, CHIN-MIN; CHOU, CHENG SAN
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 045349/0696 →
Continuity (2)
Provisional Application 62590055 · Nov 22, 2017
Related Publication 20190157337A1 · May 23, 2019
Cited By (1)
US 12,468,149