IP Library › Granted Patent US 10,684,672
Granted Patent B2
US 10,684,672 · App. 15/907,285 · Granted Jun 16, 2020

Selection of a low power consumption mode in a memory system based on information on a data transfer state

Inventors: Junji Koyama (Yokohama Kanagawa, JP); Kenji Ichihara (Kawasaki Kanagawa, JP); Keizo Ikeda (Yokohama Kanagawa, JP); Junichi Mishima (Yokohama Kanagawa, JP); Yosuke Yamahara (Kawasaki Kanagawa, JP); Takashi Yamaguchi (Yokohama Kanagawa, JP); Takuya Sekine (Yokohama Kanagawa, JP); Akinori Bito (Yokohama Kanagawa, JP); Yoshiki Yasui (Shinagawa Tokyo, JP); Ken Okuyama (Yokohama Kanagawa, JP); Yoshinori Shigeta (Kunitachi Tokyo, JP)
Assignee: TOSHIBA MEMORY CORPORATION
G06F1/3296G06F1/10G06F1/3225G06F1/3237G06F1/3275G06F1/3287G06F13/4282
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Quick Facts
Patent No.
US 10,684,672
App. No.
15/907,285
Granted
Jun 16, 2020
Kind
B2
Abstract

A memory system includes a nonvolatile semiconductor memory, and a controller circuit that includes a physical layer and is configured to store information defining a plurality of low power consumption modes for setting the physical layer to a low power consumption state while controlling the physical layer according to a first standard, and control input and output of signals between the physical layer and the nonvolatile semiconductor memory according to a second standard. The controller circuit selects one of the low power consumption modes based on a data transfer state of the physical layer.

Claims (51)

1. A memory system comprising:

a nonvolatile semiconductor memory; and

a controller circuit that includes a physical layer according to a first standard and is configured to store first information defining a plurality of low power consumption modes according to the first standard for setting the physical layer to a low power consumption state while controlling the physical layer according to the first standard, and control input and output of signals between the physical layer and the nonvolatile semiconductor memory according to a second standard, wherein

the controller circuit is configured to select one of the low power consumption modes according to the first standard, based on the stored first information and second information that varies according to a data transfer state between the physical layer and the nonvolatile semiconductor memory according to the second standard.

2. The memory system according to claim 1 , wherein

the first standard is an I/O interface standard of PCIe (Peripheral Component Interconnect express), and the second standard is an interface standard of NVMe (Non-Volatile Memory express).

3. The memory system according to claim 1 , wherein

the physical layer includes at least one lane for input/output signals, a phase-locked loop (PLL) that generates a clock, a clock gating circuit that gates the clock, and a regulator that supplies a voltage to the lane, and

the controller circuit sets at least one of the lane, the PLL, the clock gating circuit, and the regulator to an operating state or a stop state according to the selected low power consumption mode.

4. The memory system according to claim 3 , wherein

the plurality of low power consumption modes are designated with at least one of an operating or stop state of the lane in the physical layer, an operating or stop state of the clock gating circuit, an operating or stop state of the PLL, and an operating or stop state of the regulator.

5. The memory system according to claim 1 , wherein

the controller circuit includes a multiplexer that is configured to select the low power consumption mode based on the data transfer state of the physical layer, a control circuit configured to determine a low power consumption state of the physical layer according to the selected low power consumption mode, and a generation circuit configured to generate a control signal for setting the determined low power consumption state.

6. The memory system according to claim 5 , wherein

the physical layer includes at least one lane for input/output signals, a phase-locked loop (PLL) that generates a clock, a clock gating circuit that gates the clock, and a regulator that supplies a voltage to the lane, and

the generation circuit is configured to generate a separate control signal for each of the lane for input/output signals, the PLL, the clock gating circuit, and the regulator.

7. The memory system according to claim 6 , wherein

the controller circuit is connected to a host, detects a doorbell access from the host, and controls the low power consumption mode in response to the detection of the doorbell access.

8. The memory system according to claim 7 , wherein the input/output signals are transmitted to the host and received from the host through the at least one lane.

9. The memory system according to claim 8 , wherein the data transfer state is a data transfer frequency of the input/output signals that are transmitted to the host and received from the host through the at least one lane.

10. The memory system according to claim 1 , wherein the data transfer state is a data transfer frequency of input/output signals through the physical layer.

11. A method of controlling a memory system including a nonvolatile semiconductor memory, the method comprising:

controlling a physical layer according to a first standard;

controlling input and output of signals between the physical layer and the nonvolatile semiconductor memory according to a second standard; and

selecting one of a plurality of low power consumption modes according to the first standard for setting the physical layer to a low power consumption state, based on first information defining the plurality of low power consumption modes according to the first standard and second information that varies according to a data transfer state between the physical layer and the nonvolatile semiconductor memory according to the second standard.

12. The method according to claim 11 , wherein

the first standard is an I/O interface standard of PCIe (Peripheral Component Interconnect express), and the second standard is an interface standard of NVMe (Non-Volatile Memory express).

13. The method according to claim 11 , wherein

the physical layer includes at least one lane for input/output signals, a phase-locked loop (PLL) that generates a clock, a clock gating circuit that gates the clock, and a regulator that supplies a voltage to the lane, and

the plurality of low power consumption modes are designated with at least one of an operating or stop state of the lane in the physical layer, an operating or stop state of the clock gating circuit, an operating or stop state of the PLL, and an operating or stop state of the regulator.

14. The method according to claim 11 , further comprising:

detecting a doorbell access from a host to which the physical layer is connected; and

controlling the low power consumption mode in response to the detection of the doorbell access.

15. The method according to claim 14 , wherein the data transfer state is a data transfer frequency of input/output signals that are transmitted to the host and received from the host.

16. A controller circuit for a nonvolatile semiconductor memory, comprising:

a physical layer according to a first standard;

a first circuit configured to control the physical layer according to the first standard and store first information defining a plurality of low power consumption modes according to the first standard for setting the physical layer to a low power consumption state; and

a second circuit configured to control input and output of signals between the physical layer and the nonvolatile semiconductor memory according to a second standard, wherein

the first circuit is configured to select one of the plurality of low power consumption modes according to the first standard based on the stored first information and second information that varies according to a data transfer state between the physical layer and the nonvolatile semiconductor memory according to the second standard.

17. The controller circuit according to claim 16 , wherein

the first standard is an I/O interface standard of PCIe (Peripheral Component Interconnect express), and the second standard is an interface standard of NVMe (Non-Volatile Memory express).

18. The controller circuit according to claim 16 , wherein

the physical layer includes at least one lane for input/output signals, a phase-locked loop (PLL) that generates a clock, a clock gating circuit that gates the clock, and a regulator that supplies a voltage to the lane, and

the plurality of low power consumption modes are designated with at least one of an operating or stop state of the lane in the physical layer, an operating or stop state of the clock gating circuit, an operating or stop state of the PLL, and an operating or stop state of the regulator.

19. The controller circuit according to claim 16 , further comprising:

a multiplexer configured to select the low power consumption mode based on the data transfer state of the physical layer;

a control circuit configured to determine a low power consumption state of the physical layer according to the selected low power consumption mode; and

a generation circuit configured to generate a control signal for setting the determined low power consumption state.

20. The controller according to claim 19 , wherein

the physical layer includes at least one lane for input/output signals, a phase-locked loop (PLL) that generates a clock, a clock gating circuit that gates the clock, and a regulator that supplies a voltage to the lane, and

the generation circuit is configured to generate a separate control signal for each of the lane for input/output signals, the PLL, the clock gating circuit, and the regulator.

Assignments (4)
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2018
From: KOYAMA, JUNJI; ICHIHARA, KENJI; IKEDA, KEIZO; MISHIMA, JUNICHI; YAMAHARA, YOSUKE; YAMAGUCHI, TAKASHI; SEKINE, TAKUYA; BITO, AKINORI; YASUI, YOSHIKI; OKUYAMA, KEN; SHIGETA, YOSHINORI
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 045654/0759 →
Priority Claims (1)
JP 2017-180927 · Sep 21, 2017 · national
Continuity (1)
Related Publication 20190086995A1 · Mar 21, 2019
Cited By (1)
US 12,537,727