MEMORY DEVICE
A memory device includes a first conductive layer, a second conductive layer, and a variable resistance layer disposed between the first and second conductive layers. The variable resistance layer includes a first layer containing a semiconductor or a first metal oxide, a second layer disposed between the first layer and the first conductive layer, and containing a second metal oxide, and a first amorphous layer disposed between the second layer and the first conductive layer.
1 . A memory device comprising:
a first conductive layer;
a second conductive layer; and
a variable resistance layer disposed between the first and second conductive layers, wherein
the variable resistance layer comprises:
a first layer comprising a semiconductor or a first metal oxide;
a second layer disposed between the first layer and the first conductive layer, and comprising a second metal oxide;
a first amorphous layer disposed between the second layer and the first conductive layer; and
a second amorphous layer disposed between the first layer and the second layer.
2 . The memory device according to claim 1 , wherein the first amorphous layer comprises an oxide, a nitride, or an oxynitride.
3 . The memory device according to claim 1 , wherein the first amorphous layer comprises a third metal oxide that comprises two or more metal elements.
4 . The memory device according to claim 1 , wherein the first amorphous layer has a stacked structure of two or more metal oxide films.
5 . (canceled)
6 . The memory device according to claim 1 , wherein the second amorphous layer is formed of an oxide, a nitride, or an oxynitride.
7 . The memory device according to claim 6 , wherein the second amorphous layer has a stacked structure of two or more metal oxide films selected from the group consisting of aluminum oxide, hafnium oxide, and zirconium oxide.
8 . The memory device according to claim 1 , wherein the first layer has a resistivity higher than that of the second layer.
9 . The memory device according to claim 1 , wherein the first amorphous layer comprises a third metal oxide, and a standard Gibbs energy of the third metal oxide is smaller than a standard Gibbs energy of the second metal oxide.
10 . The memory device according to claim 1 , wherein the first layer does not include atoms of the second layer.
11 . The memory device according to claim 1 , wherein the first amorphous layer is arranged to absorb oxygen from the first layer.
12 . The memory device according to claim 1 , wherein the second amorphous layer does include atoms of the first or second layers.
13 . The memory device according to claim 1 , wherein the first amorphous layer has a thickness 0.2 nm to 3 nm.
14 . The memory device according to claim 1 , wherein the memory device comprises memory cells that are three-dimensionally arranged.
15 . A memory device comprising:
a first conductive layer;
a second conductive layer; and
a variable resistance layer disposed between the first and second conductive layers, wherein
the variable resistance layer comprises:
a first layer having a first resistivity;
a second layer having a second resistivity that is higher than the first resistivity;
a first amorphous layer disposed between the first conductive layer and the second conductive layer, and
a second amorphous layer disposed between the first layer and the second layer.
16 . The memory device of claim 15 , further comprising:
wherein the first amorphous layer is disposed between the first layer and the first conductive layer.
17 . A method of making a memory device comprising:
forming a first conductive layer;
forming a second conductive layer; and
forming a variable resistance layer between the first and second conductive layers, wherein
the variable resistance layer comprises:
a first layer comprising a semiconductor or a first metal oxide;
a second layer disposed between the first layer and the first conductive layer, and comprising a second metal oxide;
a first amorphous layer disposed between the second layer and the first conductive layer; and
a second amorphous layer disposed between the first layer and the second layer.
18 . The method according to claim 17 , wherein the first amorphous layer comprises an oxide, a nitride, or an oxynitride.
19 . The method according to claim 17 , wherein the first amorphous layer comprises a third metal oxide that comprises two or more metal elements.
20 . The method according to claim 17 , wherein the first amorphous layer has a stacked structure of two or more metal oxide films.