Method of forming a contact with a silicide region
Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
1. A method comprising:
forming a source/drain region in an active area on a substrate;
forming a dielectric layer over the active area;
forming an opening through the dielectric layer, the opening extending into the source/drain region to form a trench in the source/drain region, and a bottom surface and a sidewall at least partially defining the trench;
forming a silicide region at the bottom surface of the trench;
nitriding at least a portion of the source/drain region through the sidewall of the trench; and
filling the opening with a conductive material.
2. The method of claim 1 , wherein:
nitriding the at least the portion of the source/drain region through the sidewall of the trench is performed by exposing the sidewall not covered by the silicide region to nitrogen ions formed from a plasma.
3. The method of claim 1 , wherein:
nitriding the at least the portion of the source/drain region through the sidewall of the trench is performed by exposing the sidewall not covered by the silicide region to nitrogen-containing radicals generated from a plasma.
4. The method of claim 1 , further comprising:
prior to filling the opening with a conductive material, forming a conformal barrier layer in the opening, the conformal barrier layer covering the nitrided portion of the source/drain region.
5. The method of claim 1 , further comprising:
biasing the substrate while nitriding the at least the portion of the source/drain region through the sidewall of the trench.
6. The method of claim 1 , wherein nitriding the at least the portion of the source/drain region through the sidewall of the trench is performed by implanting nitrogen into the sidewall of the trench not covered by the silicide region using an ion implantation.
7. A method comprising:
forming a source/drain region in an active area on a substrate;
forming a metal silicide on a surface of the source/drain region by reacting a metal layer formed on the surface of the source/drain region with the source/drain region, the metal layer having a metal oxide at a surface of the metal layer;
removing unreacted portions of the metal layer, wherein a remaining portion of the metal layer remains on the metal silicide;
subjecting the remaining portion of the metal layer to a pre-clean process comprising a reduction process of the metal oxide and a passivation process of the reduced metal layer; and
after subjecting the remaining portion of the metal layer to the pre-clean process, forming a barrier layer over the remaining portion of the metal layer.
8. The method of claim 7 , wherein the metal layer comprises TiN, and the metal oxide is formed on the TiN.
9. The method of claim 7 , wherein the reduction process comprises exposing the metal oxide to a plasma including a hydrogen-containing gas and a nitrogen-containing gas.
10. The method of claim 9 , wherein the hydrogen-containing gas is introduced into a process chamber at a first flow rate and the nitrogen-containing gas is introduced into the process chamber at a second flow rate, and a ratio of the first flow rate to the second flow rate is about 1:1 to about 6:1.
11. The method of claim 7 , wherein the passivation process comprises incorporating nitrogen into the reduced metal layer.
12. The method of claim 7 , wherein the reduction process comprises exposing the metal oxide to hydrogen radicals or a neutral species of hydrogen.
13. The method of claim 12 , wherein the hydrogen radicals or neutral species of hydrogen are formed from a gas comprising NH 3 or from a gas comprising H 2 and N 2 .
14. The method of claim 7 , further comprising:
biasing the substrate during the pre-clean process.
15. The method of claim 7 , further comprising:
after forming the source/drain region and prior to forming the metal silicide:
forming a dielectric layer over the source/drain region; and
forming an opening through the dielectric layer, the opening extending into the source/drain region to form a trench in the source/drain region;
nitriding at least a portion of the source/drain region through a sidewall of the trench; and
after forming the barrier layer, filling the opening with a conductive material.
16. A method comprising:
forming a source/drain region in an active area on a substrate;
forming a dielectric layer over the active area;
forming an opening through the dielectric layer, the opening extending into the source/drain region to form a trench in the source/drain region;
forming a metal layer along sidewalls and a bottom of the trench;
forming a silicide region along a surface of the source/drain region at the bottom of the trench;
removing unreated portions of the metal layer along sidewalls of the trench, wherein at least an unreacted portion of the metal layer remains at the bottom of the trench;
nitriding at least a portion of the source/drain region through the sidewall of the trench;
subjecting the unreacted portion of the metal layer to a pre-clean process comprising a reduction process of a metal oxide on the unreacted portion of the metal layer and a passivation process of the reduced unreacted portion of the metal layer; and
filling the opening with a conductive material.
17. The method of claim 16 , wherein the reduction process comprises exposing the metal oxide to a plasma including a hydrogen-containing gas and a nitrogen-containing gas.
18. The method of claim 17 , wherein the passivation process comprises incorporating nitrogen into the reduced unreacted portion of the metal layer.
19. The method of claim 18 , wherein nitriding the at least the portion of the source/drain region through the sidewall of the trench is performed by exposing the sidewall not covered by the silicide region to nitrogen ions formed from a plasma.
20. The method of claim 18 , wherein nitriding the at least the portion of the source/drain region through the sidewall of the trench is performed by exposing the sidewall not covered by the silicide region to nitrogen-containing radicals generated from a plasma.