Semiconductor device and manufacturing method therefor
The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.
1. A manufacturing method for a semiconductor device, comprising the steps of:
providing a substrate;
forming a semiconductor stacked structure on the substrate;
forming a stacked cap layer on the semiconductor stacked structure, wherein the stacked cap layer includes a nitride layer;
forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein at least a part of the nitride layer is exposed by the opening;
forming an oxide protection layer on a sidewall of the opening, to cover at least the exposed part of the nitride layer; and
introducing an etchant material into the opening to etch the substrate.
2. The manufacturing method for the semiconductor device of claim 1 , wherein the step of forming the semiconductor stacked structure on the substrate includes the sub-steps of:
forming a shallow trench isolation (STI) structure on the substrate; and
forming a gate structure and a spacer layer on the STI structure.
3. The manufacturing method for the semiconductor device of claim 2 , wherein the step of forming the gate structure includes the sub-steps of:
forming a first gate structure on the STI structure;
forming a nitride dielectric layer on the first gate structure;
forming an oxide dielectric layer on the nitride dielectric layer; and
forming a second gate structure on the oxide dielectric layer.
4. The manufacturing method for the semiconductor device of claim 2 , wherein the step of forming the spacer layer includes the sub-steps of:
forming an oxide spacer layer outside a sidewall of the gate structure; and
forming a nitride spacer layer outside a sidewall of the oxide spacer layer.
5. The manufacturing method for the semiconductor device of claim 2 , wherein the step of forming the stacked cap layer on the semiconductor stacked structure includes the sub-steps of:
forming a first oxide cap layer on the semiconductor stacked structure;
forming the nitride layer on the first oxide cap layer; and
forming a second oxide cap layer on the nitride layer.
6. The manufacturing method for the semiconductor device of claim 1 , wherein the etchant material includes sulfur hexafluoride (SF6) or xenon difluoride (XeF2).