Semiconductor manufacturing apparatus
A semiconductor manufacturing apparatus according to an embodiment irradiates a semiconductor substrate with laser to form modified regions along an intended cut line in the semiconductor substrate. A light source emits the laser. An optical system comprises an objective lens configured to focus the laser in the semiconductor substrate. A light modulator is capable of modulating an energy density distribution of the laser. A controller controls the light modulator to displace a peak position of the energy density distribution of the laser from an optical axis of the objective lens in a relative movement direction of the optical system with respect to the semiconductor substrate.
1. A semiconductor manufacturing apparatus irradiating a semiconductor substrate with pulse laser to form modified regions along an intended cut line in the semiconductor substrate and to cut the semiconductor substrate, the apparatus comprising:
a stage mounting the semiconductor substrate thereon;
a light source configured to emit the pulse laser;
an optical system comprising an objective lens configured to focus the pulse laser in the semiconductor substrate:
a light modulator configured to he capable of modulating an energy density distribution of the pulse laser and to be controlled by a light modulator controller;
a movable axis controller configured to move the optical system with respect to the stage; and
a main controller configured to control the light modulator controller and the movable axis controller to displace a peak position of the energy density distribution of the pulse laser in a processing progression direction from an optical axis of the objective lens such that the peak position is displaced to reach a focus position by passing outside of the modified regions, wherein
only a focus position of the pulse laser forming the modified regions is provided in the semiconductor substrate.
2. The apparatus of claim 1 , wherein the main controller controls the light modulator controller to displace the peak position with respect to the optical axis of the objective lens in the movement direction when the movement direction is changed.
3. The apparatus of claim 2 , wherein the main controller controls the light modulator controller to displace the peak position of the energy density distribution of the pulse laser in the movement direction from a center of the energy density distribution.
4. The apparatus of claim 2 , wherein the main controller controls the light modulator controller to displace a center of the energy density distribution of the pulse laser in the movement direction from the optical axis of the objective lens.
5. The apparatus of claim 1 , wherein the main controller controls the light modulator controller to displace the peak position of the energy density distribution of the pulse laser in the movement direction from a center of the energy density distribution.
6. The apparatus of claim 1 , wherein the main controller controls the light modulator controller to displace a center of the energy density distribution of the pulse laser in the movement direction from the optical axis of the objective lens.
7. A semiconductor manufacturing apparatus irradiating a semiconductor substrate with pulse laser to form modified regions along an intended cut line in the semiconductor substrate and to cut the semiconductor substrate, the apparatus comprising:
a stage mounding the semiconductor substrate thereon;
a light source configured to emit the pulse laser;
an objective lens configured to be driven and controlled by a light modulator controller and to focus the pulse laser in the semiconductor substrate;
an optical system in which the incident angle of the laser light to the objective lens is controlled by the light modulator controller;
a light modulator configured to be capable of modulating the energy density distribution of the pulse laser and controlled by the light modulator controller;
a movable axis controller configured to move the optical system with respect to the stage; and
a main controller configured to control the light modulator controller and the movable axis controller so as to incline an incident angle of the pulse laser in a processing progression direction from a perpendicular direction to a front surface of the semiconductor substrate such that the peak position is displaced to reach a focus position by passing outside of the modified regions, wherein
only a single focus position of the pulse laser forming the modified regions is provided in the semiconductor substrate.
8. The apparatus of claim 7 , wherein the main controller controls the light modulator controller to incline the incident angle in the movement direction when the movement direction is changed.
9. The apparatus of claim 8 , wherein
the main controller controls the light modulator controller to incline an incident angle of the pulse laser with respect to the objective lens from the perpendicular direction.
10. The apparatus of claim 7 , wherein
the main controller controls the light modulator controller to incline an incident angle of the pulse laser with respect to the objective lens from the perpendicular direction.
11. The apparatus of claim 7 , wherein
the main controller controls the objective lens to incline an optical axis of the objective lens from the perpendicular direction.