Organic light emitting diode display device and method of fabricating the same
An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.
1. An organic light emitting display (OLED) device comprising:
a thin film transistor that includes a first semiconductor layer on a buffer layer, a gate insulating layer on the first semiconductor layer, a gate electrode, a source electrode, and a drain electrode; and
a first capacitor electrically coupled between the gate electrode and either the drain electrode or the source electrode of the thin film transistor, the first capacitor formed in a second region of the substrate, the first capacitor including a first capacitor electrode, the buffer layer on the first capacitor electrode, a second semiconductor layer on the buffer layer, and a second capacitor electrode on the second semiconductor layer,
wherein the second semiconductor layer is thinner than the gate insulating layer, and
wherein the gate insulating layer has at least one hole in the second region.
2. The OLED device of claim 1 , wherein the second semiconductor layer and the first semiconductor layer are formed in a same process with a same thickness.
3. The OLED device of claim 1 , wherein the gate insulating layer extends partially into the second region between the second capacitor electrode and the second semiconductor layer to cover a part of the second semiconductor layer.
4. The OLED device of claim 1 , wherein the gate insulating layer has a plurality of spatially separated holes in the second region between the second capacitor electrode and the second semiconductor layer to expose the second semiconductor layer to the second capacitor electrode.
5. The OLED device of claim 1 , further comprising a second capacitor adjacent to the first capacitor, the second capacitor including the second capacitor electrode, an inter insulating layer on the second capacitor electrode, and a third capacitor electrode on the inter insulating layer, the first capacitor and the second capacitor electrically coupled to each other in parallel.
6. The OLED device of claim 5 , wherein the first capacitor electrode and the third capacitor electrode are both connected to either a source or a drain electrode of the thin film transistor through a common connection pattern, both the gate insulating layer and the inter insulating layer absent in a vicinity of the connection pattern.
7. The OLED device of claim 1 , further comprising an OLED formed in an emission area of the substrate, the emission area overlapping at least partially with the second region of the substrate.
8. The OLED device of claim 1 , wherein the gate insulating layer covers edges of the second semiconductor layer.
9. The OLED device of claim 1 , wherein the second capacitor electrode directly contacts a side surface of the gate insulating layer in the second region.
10. The OLED device of claim 1 , wherein the second capacitor electrode directly contacts the second semiconductor layer through the at least one hole.
11. The OLED device of claim 1 , wherein the first semiconductor layer and the second semiconductor layer are in direct contact with the buffer layer.