CMOS compatible BioFET
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
1. A BioFET device, comprising:
a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region within the semiconductor substrate, wherein the channel region interposes a source region and a drain region in the semiconductor substrate, and wherein the source and drain regions are disposed within a well region in the semiconductor substrate;
an isolation layer having a top surface, an opposite bottom surface, and an opening and disposed on a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being parallel to and opposing the first surface of the semiconductor substrate, wherein the opening is located over the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate, and wherein the top surface of the isolation layer is a greater distance from the second surface of the semiconductor substrate compared to the bottom surface of the isolation layer;
an inorganic layer disposed on the channel region of the second surface of the semiconductor substrate in the opening, wherein the inorganic layer has a top surface and an opposite bottom surface, wherein the top surface of the inorganic layer is a greater distance from the second surface of the semiconductor substrate compared to the bottom surface of the inorganic layer, and wherein the top surface of the isolation layer is a greater distance from the second surface of the semiconductor substrate compared to the top surface of the inorganic layer;
an insulating layer disposed on the isolation layer;
a fluidic channel disposed on the insulating layer and the isolation layer, wherein the inorganic layer is disposed within a cavity of the fluidic channel; and
a plurality of biomolecules bound to the inorganic layer.
2. The BioFET device of claim 1 , wherein the plurality of biomolecules includes enzymes, oligonucleotides, or monoclonal antibodies.
3. The BioFET device of claim 1 , further comprising a multi-layer interconnect (MLI) structure on the first surface of the semiconductor substrate, wherein the MLI structure includes at least a first conductive layer and a second conductive layer interposed by an inter-layer dielectric (ILD) layer.
4. The BioFET device of claim 1 , wherein the BioFET device is a first BioFET device, wherein a second BioFET device is connected to the first BioFET device by a first conductive line, wherein a third BioFET device and a fourth BioFET device are connected to a second conductive line, and wherein the first, second, third and fourth BioFET devices are disposed in an array configuration.
5. The BioFET device of claim 4 , wherein the first conductive line is configured to carry a current when the first or second BioFET device detects a binding event between a target biomolecule and the plurality of biomolecules on the inorganic layer of the first or second BioFET device, and wherein the second conductive line is configured to carry a current when the third or fourth BioFET device detects a binding event between the target biomolecule and the plurality of biomolecules on the inorganic layer of the third or fourth BioFET device.
6. The BioFET device of claim 1 , wherein the inorganic layer comprises a dielectric material and a plurality of deposited layers.
7. The BioFET device of claim 1 , wherein an inter-layer dielectric (ILD) layer is disposed on the first surface of the semiconductor substrate and on the well region.
8. The BioFET device of claim 7 , wherein a first surface of the well region is in physical contact with the ILD layer and a second surface of the well region is in physical contact with the isolation layer.
9. A BioFET device, comprising:
a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region within the semiconductor substrate, wherein the channel region interposes a source region and a drain region in the semiconductor substrate;
an isolation layer having an opening and disposed on a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being parallel to and opposing the first surface of the semiconductor substrate, wherein the opening is located over the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate;
an interface material on the channel region of the second surface of the semiconductor substrate in the opening;
a multi-layer interconnect (MLI) structure on the first surface of the semiconductor substrate, wherein the MLI structure includes at least a first conductive layer and a second conductive layer interposed by an inter-layer dielectric (ILD) layer;
a trench extending through the isolation layer and through the semiconductor substrate to the first conductive layer of the MLI structure;
an interconnect layer disposed in the trench and making conductive contact with the first conductive layer of the MLI structure;
an insulating layer disposed on the interconnect layer in the trench and on the isolation layer, wherein at least a first portion of the interconnect layer is interposed between the isolation layer and the insulating layer;
a fluidic channel disposed on the insulating layer and the interconnect layer; and
a plurality of biomolecules bound to the interface material.
10. The BioFET device of claim 9 , wherein the plurality of biomolecules includes enzymes, oligonucleotides, or monoclonal antibodies.
11. The BioFET device of claim 9 , wherein the interconnect layer is configured to provide a surface connection to a wire bond or solder bump.
12. The BioFET device of claim 9 , wherein the BioFET device is a first BioFET device, wherein a second BioFET device is connected to the first BioFET device by a first conductive line, wherein a third BioFET device and a fourth BioFET device are connected to a second conductive line, and wherein the first, second, third and fourth BioFET devices are disposed in an array configuration.
13. The BioFET device of claim 12 , wherein the first conductive line is configured to carry a current when the first or second BioFET device detects a binding event between a target biomolecule and the plurality of biomolecules on the interface material of the first or second BioFET device, and wherein the second conductive line is configured to carry a current when the third or fourth BioFET device detects a binding event between the target biomolecule and the plurality of biomolecules on the interface material of the third or fourth BioFET device.
14. The BioFET device of claim 9 , wherein the interface material comprises a dielectric material and a plurality of deposited layers.
15. The BioFET device of claim 9 , wherein at least a second portion of the interconnect layer is interposed between the isolation layer and the fluidic channel.
16. The BioFET device of claim 9 , wherein a first portion of the insulating layer is interposed between the fluidic channel and the isolation layer and a second portion of the insulation layer is interposed between the fluidic channel and the interconnect layer.
17. A BioFET device, comprising:
a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region within the semiconductor substrate, wherein the channel region interposes a source region and a drain region in the semiconductor substrate, and wherein the source and drain regions are disposed within a well region in the semiconductor substrate;
an isolation layer having an opening and disposed on a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being parallel to and opposing the first surface of the semiconductor substrate, wherein the opening is located over the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate;
an inorganic layer disposed on the channel region of the second surface of the semiconductor substrate in the opening, the inorganic layer having a lower thickness than the isolation layer;
a multi-layer interconnect (MLI) structure on the first surface of the semiconductor substrate, wherein the MLI structure includes at least a first conductive layer and a second conductive layer interposed by an inter-layer dielectric (ILD) layer;
a carrier substrate coupled to the first conductive layer of the MLI structure;
an insulating layer disposed on the isolation layer;
a fluidic channel disposed on the insulating layer and the isolation layer; and
a plurality of biomolecules bound to the interface material.
18. The BioFET device of claim 17 , wherein the plurality of biomolecules includes enzymes, oligonucleotides, or monoclonal antibodies.
19. The BioFET device of claim 17 , wherein the carrier substrate includes one or more bonding elements connected to the first conductive layer of the MLI structure.
20. The BioFET device of claim 17 , wherein the BioFET device is a first BioFET device, wherein a second BioFET device is connected to the first BioFET device by a first conductive line, wherein a third BioFET device and a fourth BioFET device are connected to a second conductive line, and wherein the first, second, third and fourth BioFET devices are disposed in an array configuration.