Semiconductor device and method of manufacturing the same
A semiconductor device 1 includes: a well region 5 provided on a surface layer of a semiconductor substrate 2 ; a source region 14 S and a drain region 15 D disposed to be distant from each other on the surface layer of the well region 5 ; a channel region 6 provided between the source region 14 S and the drain region 15 D; and a gate electrode 8 provided over the channel region 6 with a gate insulator 7 interposed therebetween. A gate length of the gate electrode 8 is 1.5 μm or less, the channel region 6 includes indium as a channel impurity, a distance between a surface of the channel region 6 and a concentration peak position of the channel impurity is 20 nm to 70 nm, and a concentration of the channel impurity gradually decreases in a direction from the concentration peak position of the channel impurity to the surface of the channel region.
1. A semiconductor device comprising:
a well region provided on a surface layer of a semiconductor substrate;
a source region and a drain region disposed to be distant from each other on a surface layer of the well region;
a channel region provided between the source region and the drain region; and
a gate electrode provided over the channel region with a gate insulator interposed between the gate electrode and the channel region,
wherein a gate length of the gate electrode is 1.5 μm or less,
the channel region includes indium as a channel impurity,
a distance between a surface of the channel region and a concentration peak position of the channel impurity is 20 nm to 70 nm,
a concentration of the channel impurity gradually decreases in a direction from the concentration peak position of the channel impurity to the surface of the channel region, and
the semiconductor device is an n-channel MOSFET.
2. The semiconductor device according to claim 1 ,
wherein an interface state density of the channel region is 3.0×10 9 cm −2 or higher and lower than 1.0×10 10 cm −2 .
3. The semiconductor device according to claim 1 , further comprising:
a side wall spacer provided on a side surface of the gate electrode; and
a silicide layer provided on a surface of each of the gate electrode, the source region, and the drain region.
4. The semiconductor device according to claim 2 , further comprising:
a side wall spacer provided on a side surface of the gate electrode; and
a silicide layer provided on a surface of each of the gate electrode, the source region, and the drain region.
5. A method of manufacturing a semiconductor device comprising:
ion-implanting a well impurity into a surface layer of a semiconductor substrate;
implanting an indium ion as a channel impurity into the surface layer of the semiconductor substrate;
performing a first heat treatment on the semiconductor substrate into which the well impurity and the indium ion have been implanted;
forming a gate insulator on the surface layer of the semiconductor substrate on which the first heat treatment has been performed;
forming a polysilicon film on the gate insulator;
performing a second heat treatment on the semiconductor substrate on which the polysilicon film has been formed after the formation of the polysilicon film; and
forming a gate electrode having a gate length of 1.5 μm or less by ion-implanting a gate impurity into the polysilicon film, patterning the polysilicon film, and performing a third heat treatment on the semiconductor substrate.
6. The method of manufacturing a semiconductor device according to claim 5 ,
wherein the second heat treatment is performed at a temperature of 965° C. to 1125° C.
7. The method of manufacturing a semiconductor device according to claim 6 ,
wherein the second heat treatment is performed for 15 seconds to 60 seconds.
8. The method of manufacturing a semiconductor device according to claim 5 , further comprising:
forming an extension region including an extension impurity by ion-implanting the extension impurity into the surface layer of the semiconductor substrate by using the gate electrode as a mask, and performing a fourth heat treatment;
forming a side wall spacer on a side surface of the gate electrode; and
forming a contact region including a contact impurity by implanting the contact impurity into the surface layer of the semiconductor substrate more deeply than the extension impurity by using the gate electrode and the side wall spacer as a mask, and performing a fifth heat treatment on the semiconductor substrate.
9. The method of manufacturing a semiconductor device according to claim 8 , further comprising:
forming a silicide layer on a surface of each of the gate electrode and the contact region.
10. The method of manufacturing a semiconductor device according to claim 6 , further comprising:
forming an extension region including an extension impurity by ion-implanting the extension impurity into the surface layer of the semiconductor substrate by using the gate electrode as a mask, and performing a fourth heat treatment;
forming a side wall spacer on a side surface of the gate electrode; and
forming a contact region including a contact impurity by implanting the contact impurity into the surface layer of the semiconductor substrate more deeply than the extension impurity by using the gate electrode and the side wall spacer as a mask, and performing a fifth heat treatment on the semiconductor substrate.
11. The method of manufacturing a semiconductor device according to claim 7 , further comprising:
forming an extension region including an extension impurity by ion-implanting the extension impurity into the surface layer of the semiconductor substrate by using the gate electrode as a mask, and performing a fourth heat treatment;
forming a side wall spacer on a side surface of the gate electrode; and
forming a contact region including a contact impurity by implanting the contact impurity into the surface layer of the semiconductor substrate more deeply than the extension impurity by using the gate electrode and the side wall spacer as a mask, and performing a fifth heat treatment on the semiconductor substrate.