Semiconductor device
According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.
1. A semiconductor device, comprising:
a silicon layer including phosphorus;
a buried layer provided on the silicon layer;
a stacked body provided on the buried layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
a semiconductor body extending in a stacking direction of the stacked body through the stacked body and through the buried layer, and including a sidewall portion positioned at a side of the buried layer; and
a silicon film provided between the buried layer and the sidewall portion of the semiconductor body, the silicon film including silicon as a major component and further including at least one of germanium or carbon, wherein a germanium composition ratio inside the silicon film is 5 atomic % or more.
2. The device according to claim 1 , wherein a carbon concentration in the silicon film is 1×10 19 cm −3 or more.
3. The device according to claim 1 , wherein the silicon film further includes phosphorus.
4. The device according to claim 3 , wherein a phosphorus concentration in the silicon film is 1×10 20 cm −3 or more.
5. The device according to claim 1 , wherein the silicon film contacts the sidewall portion of the semiconductor body.
6. The device according to claim 1 , wherein the silicon film is provided also between the silicon layer and the buried layer.
7. The device according to claim 1 , wherein the buried layer is a silicon layer or a silicon oxide layer.
8. A semiconductor device, comprising:
a first silicon layer including phosphorus;
a second silicon layer including phosphorus and being provided on the first silicon layer;
a crystal separation layer provided between the first silicon layer and the second silicon layer;
a stacked body provided on the second silicon layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed; and
a semiconductor body extending in a stacking direction of the stacked body through the stacked body and through the second silicon layer, and including a sidewall portion positioned at a side of the second silicon layer.
9. The device according to claim 8 , wherein the crystal separation layer is a silicon layer including silicon as a major component and further including at least one of carbon, nitrogen, or oxygen.
10. The device according to claim 9 , wherein at least one of a carbon concentration, a nitrogen concentration, or an oxygen concentration in the silicon layer is 1×10 19 cm −3 or more.
11. The device according to claim 8 , wherein the crystal separation layer is an oxygen layer.
12. The device according to claim 11 , wherein an interface oxygen concentration of the oxygen layer is 1×10 14 cm −2 or more.
13. The device according to claim 8 , wherein a crystal grain boundary density inside the second silicon layer is higher than a crystal grain boundary density inside the first silicon layer.
14. The device according to claim 8 , wherein a thickness of the second silicon layer is thinner than a thickness of the first silicon layer.
15. A semiconductor device, comprising:
a first silicon layer including phosphorus;
a second silicon layer including phosphorus and being provided on the first silicon layer, a phosphorus concentration of the second silicon layer being 1×10 20 cm −3 or more;
a stacked body provided on the second silicon layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed;
a semiconductor body extending in a stacking direction of the stacked body through the stacked body and through the second silicon layer, and including a sidewall portion positioned at a side of the second silicon layer;
a first silicon film provided between the second silicon layer and the sidewall portion of the semiconductor body, the first silicon film including silicon as a major component and further including carbon, and
a second silicon film provided between the first silicon film and the sidewall portion of the semiconductor body, a carbon concentration of the second silicon film being lower than a carbon concentration of the first silicon film.
16. The device according to claim 15 , wherein the first silicon film is provided also between the first silicon layer and the second silicon layer.