Memory device
A memory device includes a crystal-including layer including a first metal, and a germanium-and-oxygen including layer contacting the crystal-including layer. At least a portion of the crystal-including layer is crystallized. The germanium-and-oxygen including layer includes germanium and oxygen.
1. A memory device, comprising:
a crystal-including layer including a first metal, at least a portion of the crystal-including layer being crystallized;
an amorphous layer directly contacting the crystal-including layer and being made of an amorphous material including a second metal different from the first metal; and
a germanium-and-oxygen including layer contacting the amorphous layer, being separated from the crystal-including layer, and including germanium and oxygen.
2. The device according to claim 1 , wherein the amorphous layer includes an oxide, an oxynitride, a silicate, or an aluminate of the second metal.
3. The device according to claim 2 , wherein the second metal is one or more metals selected from the group consisting of aluminum, titanium, zirconium, hafnium, niobium, tantalum, and tungsten.
4. The device according to claim 1 , wherein the amorphous layer includes aluminum oxide.
5. The device according to claim 1 , wherein the crystal-including layer includes an oxide, an oxynitride, a silicate, or an aluminate of the first metal.
6. The device according to claim 5 , wherein the first metal is one or more metals selected from the group consisting of aluminum, titanium, zirconium, hafnium, niobium, tantalum, and tungsten.
7. The device according to claim 1 , wherein the crystal-including layer includes crystallized titanium oxide.
8. The device according to claim 1 , wherein the germanium-and-oxygen including layer is made of germanium oxide.
9. The device according to claim 1 , wherein the number of oxygen atoms per germanium atom in the germanium-and-oxygen including layer is not less than 1 and not more than 2.
10. The device according to claim 1 , wherein the germanium-and-oxygen including layer further includes one or more type of Group IV element.
11. The device according to claim 1 , wherein
the germanium-and-oxygen including layer includes:
a plurality of germanium oxide layers; and
a plurality of germanium layers, and
the germanium oxide layers and the germanium layers are stacked alternately.
12. The device according to claim 1 , wherein
the germanium-and-oxygen including layer includes:
a germanium oxide layer; and
a germanium layer, and
the germanium oxide layer is disposed between the crystal-including layer and the germanium layer.