Magnetoresistive effect element and method of manufacturing the same
View Patent ↗According to one embodiment, a method of manufacturing a magnetoresistive-effect element includes: forming a second layer on a stack of layers, the stack of layers including a ferromagnetic layer and a first layer, the first layer comprising magnesium oxide, the second layer and magnesium oxide having a selected ratio larger than 1 to first etching by ion beams; and etching the stack of layers through the first etching with the second layer used as a mask.
1. A method of manufacturing a magnetoresistive-effect element, the method comprising:
forming a second layer on a stack of layers, the stack of layers including a ferromagnetic layer and a first layer, the first layer comprising magnesium oxide, and the second layer and magnesium oxide having a selected ratio larger than 1 to first etching by ion beams; and
etching the stack of layers through the first etching with the second layer used as a mask,
wherein the second layer comprises at least one of silver sulfate (I), an aluminum chloride, aluminum fluoride, mullite, aluminum sulfate, an arsenic pentoxide, arsenic trioxide, an aluminum oxide, a witherite, barium fluoride, barium nitrate, alexandrite, calcium hydroxide, a calcium chloride, calcite, fluorite, dolomite, a calcium oxide, perovskite, malachite, a fayalite, lanthanum oxide, magnesium hydroxide, a forsterite, spinel, magnesite, a cryolite, a beta2-tridiymite, samarium oxide, and rutile.
2. The method according to claim 1 , wherein:
the second layer has a pattern isolated when the etching is started.
3. The method according to claim 1 , wherein:
the second layer comprises a crystalline compound.
4. The method according to claim 1 , wherein:
the stack of layers further includes a metal layer, and
the second layer is formed on the metal layer.
5. The method according to claim 4 , wherein:
the metal layer contains tantalum, and
the second layer comprises a crystalline compound.
6. The method according to claim 2 , wherein:
the second layer comprises a crystalline compound.
7. The method according to claim 2 , wherein:
the stack of layers further includes a metal layer, and
the second layer is formed on the metal layer.
8. The method according to claim 7 , wherein:
the metal layer contains tantalum, and
the second layer comprises a crystalline compound.
9. The method according to claim 3 , wherein:
the stack of layers further includes a metal layer, and
the second layer is formed on the metal layer.
10. The method according to claim 9 , wherein:
the metal layer contains tantalum, and
the second layer comprises a crystalline compound.