Method of processing substrate
Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).
1. A method of processing a substrate, comprising:
(a) loading a substrate having a patterned hard mask into a process chamber;
(b) supplying a metal-containing gas at a first pressure into the process chamber; and
(c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).
2. The method of claim 1 , wherein a first gas supply system configured to supply the metal-containing gas and a second gas supply system configured to supply the inert gas are connected to the process chamber, and
the metal-containing gas is supplied by the first gas supply system in (b) and the inert gas is supplied by the second gas supply system in (c).
3. The method of claim 2 , further comprising: (d) supplying the metal-containing gas at the second pressure stored in (c) into the process chamber after performing (c).
4. The method of claim 3 , further comprising: (e) performing a cycle comprising (c) and (d) a predetermined number of times.
5. The method of claim 3 , further comprising: (f) modifying the patterned hard mask after performing (c).
6. The method of claim 3 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.
7. The method of claim 2 , further comprising: (f) modifying the patterned hard mask after performing (c).
8. The method of claim 7 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.
9. The method of claim 2 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.
10. The method of claim 2 , wherein the second gas supply system comprises a flash tank, and the inert gas is flash-supplied from the flash tank.
11. The method of claim 1 , further comprising: (d) supplying the metal-containing gas at the second pressure into the process chamber after performing (c).
12. The method of claim 11 , further comprising: (e) performing a cycle comprising (c) and (d) a predetermined number of times.
13. The method of claim 12 , further comprising: (f) modifying the patterned hard mask after performing (c).
14. The method of claim 13 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.
15. The method of claim 12 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.
16. The method of claim 11 , further comprising: (f) modifying the patterned hard mask after performing (c).
17. The method of claim 16 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.
18. The method of claim 1 , further comprising: (f) modifying the patterned hard mask after performing (c).
19. The method of claim 18 , wherein a temperature at a surface of the substrate is higher than a re-liquefying temperature of the metal-containing gas and lower than thermal decomposition temperature of the metal-containing gas.