Magnetic memory device

1. A magnetic memory device, comprising:

a first magnetic member including a first extension portion and a third portion, the first extension portion extending along a first direction and including a first portion and a second portion, the third portion being connected to the second portion, a direction from the first portion toward the second portion being aligned with the first direction, at least a portion of the third portion being tilted with respect to the first direction;

a first magnetic layer; and

a first nonmagnetic layer provided between the first magnetic layer and the at least a portion of the third portion, the first nonmagnetic layer being provided along the at least a portion of the third portion and being tilted with respect to the first direction,

wherein

the first magnetic layer has a third surface and a fourth surface, the third surface opposing the first nonmagnetic layer, the fourth surface being opposite the third surface, and

a length of the fourth surface is longer than a length of the third surface when the first magnetic layer is cut by a plane, the plane including the first direction and a direction from the at least a portion of the third portion toward the first magnetic layer.

2. The device according to claim 1 , wherein at least a portion of the third portion is curved.

3. The device according to claim 2 , wherein the first nonmagnetic layer is curved along the at least a portion of the third portion.

4. The device according to claim 2 , wherein the first magnetic layer is curved along the at least a portion of the third portion.

5. The device according to claim 1 , wherein

the third portion has a first surface and a second surface, the first surface opposing the first nonmagnetic layer, the second surface being opposite the first surface,

the first surface is convex, and

the second surface is concave.

6. The device according to claim 1 , wherein

the first magnetic layer has a third surface and a fourth surface, the third surface opposing the first nonmagnetic layer, the fourth surface being opposite the third surface, and

a surface area of the fourth surface is greater than a surface area of the third surface.

7. The device according to claim 1 , wherein the first extension portion has a tubular configuration extending along the first direction.

8. The device according to claim 1 , wherein the first extension portion is configured to retain a plurality of magnetic domains.

9. The device according to claim 1 , further comprising:

a first electrode electrically connected to the first portion;

a second electrode electrically connected to the second portion;

a third electrode electrically connected to the first magnetic layer; and

a controller electrically connected to the first electrode, the second electrode, and the third electrode,

the controller applying a voltage between the second electrode and the third electrode in a first operation of writing information to the third portion,

the controller causing a first current to flow between the first electrode and the third electrode in a second operation of shifting information written to the first extension portion.

10. The device according to claim 9 , wherein the controller senses, in a third operation of reading information of the third portion, a value corresponding to an electrical resistance between the first magnetic layer and the third portion.

11. A magnetic memory device, comprising:

a first magnetic member including a first extension portion and a third portion, the first extension portion extending along a first direction and including a first portion and a second portion, the third portion being connected to the second portion, a direction from the first portion toward the second portion being aligned with the first direction, at least a portion of the third portion being aligned with the first direction;

a first magnetic layer; and

a first nonmagnetic layer provided between the first magnetic layer and the at least a portion of the third portion,

wherein

the first magnetic layer has a third surface and a fourth surface, the third surface opposing the first nonmagnetic layer, the fourth surface being opposite the third surface, and

a length of the fourth surface is longer than a length of the third surface when the first magnetic layer is cut by a plane perpendicular to the first direction.

12. The device according to claim 11 , wherein a direction from the at least a portion of the third portion toward the first magnetic layer crosses the first direction.

13. A magnetic memory device, comprising:

a first magnetic member including a first extension portion and a third portion, the first extension portion extending along a first direction and including a first portion and a second portion, the third portion being connected to the second portion, a direction from the first portion toward the second portion being aligned with the first direction, at least a portion of the third portion being tilted with respect to the first direction;

a first magnetic layer; and

a first nonmagnetic layer provided between the first magnetic layer and the at least a portion of the third portion, the first nonmagnetic layer being provided along the at least a portion of the third portion and being tilted with respect to the first direction,

wherein the first extension portion has a tubular configuration extending along the first direction, and

a length of the third portion along a second direction is narrower than a width of the first extension portion along the second direction, the second direction crossing a plane including the first direction and a direction from the first magnetic layer toward the at least a portion of the third portion.

14. A magnetic memory device, comprising:

a first magnetic member including a first extension portion and a third portion, the first extension portion extending along a first direction and including a first portion and a second portion, the third portion being connected to the second portion, a direction from the first portion toward the second portion being aligned with the first direction, at least a portion of the third portion being tilted with respect to the first direction;

a first magnetic layer; and

a first nonmagnetic layer provided between the first magnetic layer and the at least a portion of the third portion, the first nonmagnetic layer being provided along the at least a portion of the third portion and being tilted with respect to the first direction,

wherein a thickness of the at least a portion of the third portion along a direction is not less than 2 nm and not more than 10 nm, the direction being from the first magnetic layer toward the at least a portion of the third portion, and

a width of the first extension portion along a direction perpendicular to the first direction is not less than 10 nm and not more than 100 nm.

15. The device according to claim 14 , wherein a thickness of the first magnetic layer along the direction is not less than 5 nm and not more than 20 nm, the direction being from the first magnetic layer toward the at least a portion of the third portion.

16. The device according to claim 14 , wherein a thickness of the first nonmagnetic layer along the direction is not less than 0.5 nm and not more than 2 nm, the direction being from the first magnetic layer toward the at least a portion of the third portion.

17. A magnetic memory device, comprising:

a first magnetic member including a first extension portion and a third portion, the first extension portion extending along a first direction and including a first portion and a second portion, the third portion being connected to the second portion, a direction from the first portion toward the second portion being aligned with the first direction, at least a portion of the third portion being tilted with respect to the first direction;

a first magnetic layer; and

a first nonmagnetic layer provided between the first magnetic layer and the at least a portion of the third portion, the first nonmagnetic layer being provided along the at least a portion of the third portion and being tilted with respect to the first direction,

wherein

the first magnetic member, the first magnetic layer, and the first nonmagnetic layer are included in one memory portion,

a plurality of the memory portions is provided, and

the plurality of memory portions is arranged in two directions crossing the first direction.