Substrate processing apparatus
Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.
1. A substrate processing apparatus comprising:
a process chamber accommodating a substrate;
a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe;
an exhaust pipe configured to exhaust an inner atmosphere of the process chamber;
a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe;
a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe; and
a controller configured to: (a) control the process gas supply system to supply the process gas to the substrate in the process chamber; (b) acquire the first concentration detected by the first gas concentration sensor and the second concentration detected by the second gas concentration sensor at a predetermined time interval, and calculate and record in a memory device an amount of the reactive gas consumed in the process chamber based on the first concentration and the second concentration respectively acquired from the first gas concentration sensor and the second gas concentration sensor; and (c) control the process gas supply system to stop a supply of the process gas to the substrate in the process chamber when the amount of the reactive gas consumed in the process chamber calculated in (b) becomes smaller than or equal to a reference value.
2. The substrate processing apparatus of claim 1 , further comprising a valve provided at the process gas supply pipe,
wherein the controller is further configured to control the valve to start the supply of the process gas to the substrate in the process chamber by opening the valve.
3. The substrate processing apparatus of claim 1 , wherein the controller is configured to calculate the amount of the reactive gas consumed in the process chamber based on a difference between the first concentration and the second concentration in (b).
4. The substrate processing apparatus of claim 1 , further comprising an input/output device,
wherein the controller is further configured to: (d) calculate a cumulative amount of the reactive gas consumed in the process chamber by accumulating the amount of the reactive gas consumed in the process chamber calculated in (b) from a start of the supply of the process gas to the substrate in the process chamber; and (e) control the input/output device to inform a user of the cumulative amount calculated in (d).
5. The substrate processing apparatus of claim 4 , wherein the controller is further configured to control the input/output device to inform the user of the cumulative amount calculated in (d) as a progress of processing of the substrate.
6. The substrate processing apparatus of claim 1 , wherein the controller is further configured to: (d) calculate a cumulative amount of the reactive gas consumed in the process chamber by accumulating the amount of the reactive gas consumed in the process chamber calculated in (b) from a start of the supply of the process gas to the substrate in the process chamber; and (e) control the process gas supply system to stop the supply of the process gas to the substrate in the process chamber when the cumulative amount calculated in (d) reaches a predetermined value.
7. The substrate processing apparatus of claim 1 , wherein the controller is further configured to: (d) calculate a cumulative amount of the reactive gas consumed in the process chamber by accumulating the amount of the reactive gas consumed in the process chamber calculated in (b) from a start of the supply of the process gas to the substrate in the process chamber; and (e) record the cumulative amount calculated in (d) in the memory device.
8. The substrate processing apparatus of claim 1 , further comprising a process gas generator configured to generate and supply the process gas containing the reactive gas including hydrogen peroxide to the process gas supply pipe.
9. The substrate processing apparatus of claim 1 , further comprising a vaporizer configured to vaporize hydrogen peroxide solution to produce the process gas and supply the process gas to the process gas supply pipe.
10. The substrate processing apparatus of claim 1 , wherein the first gas concentration sensor comprises: a cell wherethrough the process gas passes; a light emitter configured to irradiate a near-infrared ray to the process gas passing through the cell; a light receiver configured to receive the near-infrared ray irradiated to the process gas; and a calculator configured to calculate the first concentration based on a spectrum of the near-infrared ray received by the light receiver.