Apparatuses, systems and methods for ion traps
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
1. A method of forming an ion trap apparatus, comprising:
forming a number of microwave (MW) rails and a number of radio frequency (RF) rails with substantially parallel longitudinal axes and with substantially coplanar upper surfaces;
forming two sequences of direct current (DC) electrodes with each sequence extending substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails; and
forming a number of through-silicon vias (TSVs) through a substrate of the ion trap; and
forming a trench capacitor in the substrate around at least one TSV to provide an electrical potential to the two sequences of DC electrodes.
2. The method of claim 1 , further comprising:
biasing the two sequences of DC electrodes with DC voltages that contribute to a combined electrical field and magnetic field to trap at least one ion in a potential well above an upper surface of at least one of the DC electrodes, the MW rails, and the RF rails.
3. The method of claim 1 , further comprising:
conducting an oscillating current through the number of RF rails to contribute to a combined electrical field and magnetic field to trap at least one ion in a potential well above the DC electrodes, the MW rails and the RF rails.
4. The method of claim 1 , further comprising:
conducting an oscillating current through the number of MW rails to contribute to transition between quantum states of at least one ion in a potential well above the MW rails or the RF rails.
5. The method of claim 1 , further comprising:
providing an electrical potential to DC electrodes in the two sequences of DC electrodes through the number of TSVs formed through the substrate.
6. The method of claim 1 , further comprising:
forming the trench capacitor in the substrate with a capacitance to reduce unintended variation of an electrical field to which an associated DC electrode contributes.