Spintronic devices

1. A monolithic reusable microwire assembly, comprising:

a substrate;

an electrically conductive thin-film wire formed on the substrate, said thin film wire having a narrow segment forming an active area;

a thermally and electrically insulating barrier formed on the electrically conductive thin-film wire;

a roughness-reducing layer formed on the thermally and electrically insulating barrier, said roughness-reducing layer having a surface roughness of less than or equal to 20 nm; and

a substrate adhesion layer, a thin film wire adhesion layer, a diffusion barrier layer, or a combination thereof formed between the substrate and the thin film wire.

2. The monolithic reusable microwire assembly of claim 1 , wherein the substrate comprises silicon, quartz, glass, plastic, or a combination thereof.

3. The monolithic reusable microwire assembly of claim 1 , wherein the substrate is not thermally isolated from the thin film wire and functions as a heat drain for the thin film wire.

4. The monolithic reusable microwire assembly of claim 1 , wherein the substrate adhesion layer comprises SiO 2 .

5. The monolithic reusable microwire assembly of claim 1 , wherein the thin film wire adhesion layer comprises titanium or chromium.

6. The monolithic reusable microwire assembly of claim 1 , wherein the diffusion barrier layer comprises SiN.

7. The monolithic reusable microwire assembly of claim 1 , wherein the thin film wire comprises at least one of copper, aluminum, chromium, and niobium.

8. The monolithic reusable microwire assembly of claim 1 , further comprising an adhesion layer, an etch stop layer, or a combination thereof positioned between the thin film wire and the thermally and electrically insulating barrier.

9. The monolithic reusable microwire assembly of claim 8 , wherein the adhesion layer comprises titanium, wherein the etch stop layer comprises at least one of gold, silver and platinum, and wherein the thermally and electrically insulating barrier comprises a SiN layer, a SiO 2 layer, or a combination thereof.

10. The monolithic reusable microwire assembly of claim 1 , wherein the roughness-reducing layer has a surface roughness of less than or equal to 20 nm.

11. A monolithic spintronic device, comprising,

a monolithic reusable microwire assembly, comprising:

a substrate;

an electrically conductive thin-film wire formed on the substrate, said thin film wire having a narrow segment forming an active area;

a thermally and electrically insulating barrier formed on the electrically conductive thin-film wire; and

a roughness-reducing layer formed on the thermally and electrically insulating barrier, said roughness-reducing layer having a surface roughness of less than or equal to 20 nm; and

a thin film device formed on the monolithic reusable microwire assembly to form the monolithic spintronic device, and wherein the thin-film device is positioned directly above the active area of the thin film wire.

12. The monolithic spintronic device of claim 11 , wherein the thin-film device is at least one of an organic light-emitting diode (OLED), light emitting diode, magnetometer, solar cell, resistor, and capacitor.

13. The monolithic spintronic device of claim 12 , wherein the OLED comprises a hole injector layer and an emitting layer.

14. The monolithic spintronic device of claim 13 , wherein the hole injector layer comprises poly(styrene-sulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) and wherein the emitting layer comprises at least one of super-yellow poly(phenylene-vinylene) (SY-PPV), MEH-PPV (partially and fully deuterated), PCBM, P 3 HT, Alq 3 , amorphous silicon, SiC and PEDOT:PSS.

15. The monolithic spintronic device of claim 11 , wherein the thin film device has a width of from 20 nm to 400 nm.

16. The monolithic spintronic device of claim 11 , further comprising a cathode formed on the thin film device.

17. The monolithic spintronic device of claim 11 , further comprising an electrical contact layer formed between the thin-film device and the monolithic thin-film microwire assembly.

18. A method of manufacturing a monolithic microwire assembly, comprising:

depositing an electrically conductive thin film microwire on a substrate;

shaping the thin film microwire to have a narrow segment forming an active area of the thin film microwire; and

depositing an electrical and thermal insulation barrier on the thin film microwire;

depositing a roughness-reducing layer on the electrical and thermal insulation barrier to achieve a surface roughness of less than 5 nm.

19. The method of claim 18 , further comprising forming an oxide layer on the substrate prior to depositing the electrically conductive thin film microwire on the substrate.

20. The method of claim 19 , further comprising depositing a diffusion barrier layer on the oxide layer prior to depositing the electrically conductive thin film microwire on the substrate.

21. The method of claim 20 , wherein the diffusion barrier layer comprises SiN.

22. The method of claim 20 , further comprising depositing a thin film microwire adhesion layer on the diffusion barrier layer.

23. The method of claim 22 , wherein the thin film microwire adhesion layer comprises titanium.

24. The method of claim 18 , further comprising depositing a thin film microwire adhesion layer on the thin film microwire.

25. The method of claim 18 , further comprising depositing an etch stop layer on the thin film microwire or intervening thin film microwire adhesion layer prior to shaping the thin film microwire.

26. The method of claim 25 , further comprising depositing an etch stop adhesion layer on the etch stop layer.

27. The method of claim 18 , wherein shaping the thin film microwire comprises photolithography, wet etching, or a combination thereof.

28. The method of claim 18 , further comprising etching an exposed surface of the electrical and thermal insulation barrier to reduce surface roughness to less than or equal to a thickness of the top layer.