Substrate treatment apparatus and manufacturing method of semiconductor device
According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.
1. A substrate treatment apparatus comprising:
a hair member comprising:
a core part including a first material;
a metal film formed on the core part, the metal being different from the first material;
a noble metal film formed on the metal film, the metal being smaller in specific resistance than the noble metal; and
a liquid passing nozzle to supply a liquid chemical, wherein
while a tip part of the hair member is contact with a predetermined surface of a metal layer formed on a workpiece to be processed, the liquid passing nozzle being configured to supply the liquid chemical onto the contact portion between the hair member and a surface of the metal layer, and the contact portion of the metal layer is removed with etching.
2. The substrate treatment apparatus according to claim 1 , wherein
the liquid chemical is supplied onto the surface of the metal layer via the hair member.
3. The substrate treatment apparatus according to claim 1 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).
4. The substrate treatment apparatus according to claim 1 , wherein
a first conductor is formed on a surface of the noble metal.
5. The substrate treatment apparatus according to claim 4 , wherein
the first conductor is a carbon material.
6. The substrate treatment apparatus according to claim 4 , wherein
the first conductor is formed on the tip part of the noble metal of the hair member, and a side part of the noble metal of the hair member is exposed.
7. The substrate treatment apparatus according to claim 1 , wherein
the first material is a carbon material.
8. The substrate treatment apparatus according to claim 1 , wherein
the liquid chemical has conductivity.
9. The substrate treatment apparatus according to claim 1 , wherein
the liquid chemical has alkalinity.
10. The substrate treatment apparatus according to claim 1 , wherein
the metal of the metal film includes copper.
11. The substrate treatment apparatus according to claim 1 , wherein
the base includes a porous material.
12. A substrate treatment apparatus comprising:
a base;
a plurality of hair members respectively extends from the base toward a workpiece to be processed, the pluralities of hair members each comprising:
a core part including a first material;
a metal film formed on the core part, the metal being different from the first material;
a noble metal film formed on the metal film, the metal being smaller in specific resistance than the noble metal; and
a liquid passing nozzle to supply a liquid chemical to the workpiece.
13. The substrate treatment apparatus according to claim 12 , wherein
the liquid chemical is supplied onto the surface of the metal layer via the hair member.
14. The substrate treatment apparatus according to claim 12 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).
15. The substrate treatment apparatus according to claim 12 , wherein
a first conductor is formed on a surface of the noble metal.
16. The substrate treatment apparatus according to claim 15 , wherein
the first conductor is a carbon material.
17. The substrate treatment apparatus according to claim 12 , wherein
the first material is a carbon material.
18. A substrate treatment apparatus comprising:
a base;
a plurality of conductive portions having a line shape that respectively extends from the base toward a workpiece to be processed, the pluralities of conductive portions each comprising:
a core part including a first material;
a metal film formed on the core part, the metal being different from the first material;
a noble metal film formed on the metal film, the metal being smaller in specific resistance than the noble metal; and
a liquid passing nozzle to supply a liquid chemical to the workpiece, the liquid passing nozzle being configured to supply a liquid chemical onto a contact portion between the plurality of conductive portions and a surface of the workpiece, and a contact portion of the workpiece is removed with etching.
19. The substrate treatment apparatus according to claim 18 , wherein
the liquid chemical is supplied onto the surface of the metal layer via the conductive portion.
20. The substrate treatment apparatus according to claim 18 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).
21. The substrate treatment apparatus according to claim 18 , wherein
a first conductor is formed on a surface of the noble metal.
22. The substrate treatment apparatus according to claim 21 , wherein
the first conductor is a carbon material.
23. The substrate treatment apparatus according to claim 18 , wherein
the first material is a carbon material.