Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

preparing a substrate, in which an insulating film as a base film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film, in a process chamber;

raising a temperature of the substrate to a first temperature with an electromagnetic wave supplied from a heating device, wherein the first temperature ranges from 300 to 500 degrees C.;

crystallizing the process target film of the substrate for a first process time period while maintaining the first temperature, wherein the first process time period ranges from 5 to 30 minutes;

raising the temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, with the electromagnetic wave supplied from the heating device, after the crystallizing the process target film; and

repairing a crystal defect of the crystallizing the process target film of the substrate for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.

2. The method of claim 1 , wherein a plurality of substrates supported in multiple stages along a vertical direction are prepared in the process chamber, and temperatures of the plurality of substrates are raised using one or both of an electromagnetic wave oscillator installed on a side surface of the process chamber to oscillate the electromagnetic wave and a heater installed to be concentric with the process chamber to generate heat by resistance heating.

3. The method of claim 1 , wherein the process target film is an amorphous film.

4. The method of claim 3 , wherein in the crystallizing the process target film, the amorphous film is crystallized.

5. The method of claim 3 , wherein the second temperature is higher than 500 degrees C. and equal to or lower than 700 degrees C.

6. The method of claim 3 , wherein the second process time period is shorter than 5 minutes.

7. The method of claim 1 , wherein the second temperature is a temperature at which polarization occurs in the process target film.

8. The method of claim 1 , wherein a wavelength of the electromagnetic wave is longer than a thickness of the substrate.

9. The method of claim 1 , wherein in the crystallizing the process target film or the repairing the crystal defect, the substrate is processed while an inert gas is supplied.

10. The method of claim 1 , wherein a plurality of substrates supported in multiple stages along a vertical direction are prepared in the process chamber, and an interval between the plurality of substrates is equal to or longer than a half wavelength of a wavelength of the electromagnetic wave supplied from the heating device installed on a side surface of the process chamber.

11. The method of claim 1 , wherein a plurality of substrates supported in multiple stages along a vertical direction are prepared in the process chamber, and the heating device is controlled to raise temperatures of the plurality of substrates so that a temperature of an upper temperature measurer configured to measure a temperature of an upper portion of the process chamber and a temperature of a lower temperature measurer configured to measure a temperature of a lower portion of the process chamber become equivalent.

12. A substrate processing apparatus, comprising:

a process chamber configured to process a substrate, in which an insulating film as a base film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film;

a heating device configured to supply an electromagnetic wave into the process chamber to heat the substrate; and

a control part configured to control the heating device to perform:

raising a temperature of the substrate to a first temperature with the electromagnetic wave, wherein the first temperature ranges from 300 to 500 degrees C.;

crystallizing the process target film of the substrate for a first process time period at the first temperature, wherein the first process time period ranges from 5 to 30 minutes;

raising the temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the crystallizing the process target film; and

repairing a crystal defect of the crystallizing the process target film of the substrate for a second process time period, which is shorter than the first process time period, at the second temperature.

13. The apparatus of claim 12 , further comprising:

an upper temperature measurer configured to measure a temperature of an upper portion of the process chamber; and

a lower temperature measurer configured to measure a temperature of a lower portion of the process chamber,

wherein the heating device is installed on a side surface of the process chamber, and a plurality of substrates supported in multiple stages along a vertical direction are prepared in the process chamber, and

wherein the control part is configured to control the heating device such that the temperature of the upper temperature measurer and the temperature of the lower temperature measurer become equivalent.

14. A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus to perform a process by a computer, the process comprising:

preparing a substrate, in which an insulating film as a base film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film, in a process chamber;

raising a temperature of the substrate to a first temperature with an electromagnetic wave supplied from a heating device, wherein the first temperature ranges from 300 to 500 degrees C.;

crystallizing the process target film of the substrate for a first process time period after the raising the temperature of the substrate to the first temperature, wherein the first process time period ranges from 5 to 30 minutes;

raising the temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, with the electromagnetic wave supplied from the heating device, after the crystallizing the process target film; and

repairing a crystal defect of the crystallizing the process target film of the substrate for a second process time period, which is shorter than the first process time period, after the raising the temperature of the substrate to the second temperature.

15. The recording medium of claim 14 , wherein the second temperature is higher than 500 degrees C. and equal to or lower than 700 degrees C.

16. The recording medium of claim 14 , wherein a plurality of substrates supported in multiple stages along a vertical direction are prepared in the process chamber, and the heating device is controlled to raise temperatures of the plurality of substrates so that a temperature of an upper temperature measurer configured to measure a temperature of an upper portion of the process chamber and a temperature of a lower temperature measurer configured to measure a temperature of a lower portion of the process chamber become equivalent.