Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.
1. A substrate processing apparatus, comprising:
a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element;
a first nozzle connected to a precursor supply system to supply a precursor containing the main element to the substrate in the process chamber; and
a second nozzle connected to a reactant supply system to supply a reactant to the substrate in the process chamber,
wherein the first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened upward in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction,
wherein the second nozzle includes a second ceiling hole provided at a ceiling portion of the second nozzle and opened upward in a vertical direction, and a plurality of second side holes provided at a side portion of the second nozzle and opened in a horizontal direction,
wherein an opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes,
wherein the opening area of the first ceiling hole is larger than an opening area of the second ceiling hole.
2. The substrate processing apparatus of claim 1 , wherein a diameter of the first ceiling hole is not less than two times and not more than eight times a diameter of each of the plurality of first side holes.
3. The substrate processing apparatus of claim 1 , wherein a diameter of the first ceiling hole is not less than two times and not more than eight times a diameter of each of the plurality of second side holes.
4. The substrate processing apparatus of claim 1 , wherein a diameter of the first ceiling hole is not less than two times and not more than eight times a diameter of the second ceiling hole.
5. The substrate processing apparatus of claim 1 , further comprising:
a controller configured to control the precursor supply system and the reactant supply system so as to perform the process including forming the film containing the main element on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including:
supplying the precursor to the substrate via the first nozzle; and
supplying the reactant to the substrate via the second nozzle.
6. The substrate processing apparatus of claim 1 :
wherein the reactant supply system is configured to supply a first reactant and a second reactant as the reactant,
wherein the substrate processing apparatus further comprises a controller configured to control the precursor supply system and the reactant supply system so as to perform the process including forming the film containing the main element on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including:
supplying the precursor to the substrate via the first nozzle;
supplying the first reactant to the substrate via the second nozzle; and
supplying the second reactant to the substrate via the first nozzle.
7. The substrate processing apparatus of claim 1 :
wherein the reactant supply system is configured to supply a first reactant and a second reactant as the reactant,
wherein the substrate processing apparatus further comprises a controller configured to control the precursor supply system and the reactant supply system so as to perform the process including forming the film containing the main element on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including:
supplying the precursor to the substrate via the first nozzle; and
supplying the first reactant to the substrate via the second nozzle together with supplying the second reactant to the substrate via the first nozzle.