IP Library › Granted Patent US 11,495,555
Granted Patent B2
US 11,495,555 · App. 15/921,511 · Granted Nov 8, 2022

Magnetic bilayer structure for a cored or coreless semiconductor package

Inventors: Yikang Deng (Chandler, AZ); Jonathan Rosch (Mesa, AZ); Andrew Brown (Chandler, AZ); Junnan Zhao (Gilbert, AZ)
Assignee: Intel Corporation
H01L23/645H01F27/40H01L21/4857H01L21/4867H01L23/49822H01L23/49838H01L23/49894
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Quick Facts
Patent No.
US 11,495,555
App. No.
15/921,511
Granted
Nov 8, 2022
Kind
B2
Abstract

Techniques for fabricating a cored or coreless semiconductor package having one or more magnetic bilayer structures embedded therein are described. A magnetic bilayer structure includes a magnetic layer and a dielectric layer. For one technique, fabricating a cored or coreless semiconductor package includes: depositing a seed layer on a build-up layer; forming a raised pad structure and a trace on the seed layer; removing one or more uncovered portions of the seed layer to uncover top surfaces of one or more portions of the build-up layer; applying a magnetic bilayer structure on the raised pad structure, the trace, any unremoved portion of the seed layer, and the top surfaces of the one or more portions of the build-up layer, the magnetic bilayer structure comprises a magnetic layer and a dielectric layer; and forming a conductive structure on the raised pad structure. Other techniques are also described.

Claims (48)

1. A semiconductor package, comprising:

a seed layer on a build-up layer;

a raised pad structure and a trace on the seed layer;

a magnetic bilayer structure on the raised pad structure and the trace, wherein the magnetic bilayer structure comprises a magnetic layer and a dielectric layer, the magnetic layer in direct contact with the raised pad structure and the trace, wherein a top surface of the magnetic layer is co-planar with a top surface of the raised pad structure;

a conductive via in an opening in the dielectric layer of the magnetic bilayer structure, the conductive via on a top surface of the raised pad structure; and

a conductive structure on the conductive via and on a portion of a top surface of the dielectric layer of the magnetic bilayer.

2. The semiconductor package of claim 1 , wherein the raised pad structure has a z-height that is larger than a z-height of the trace.

3. The semiconductor package of claim 1 , wherein the magnetic layer comprises one or more of:

a film comprising one or more magnetic fillers;

a paste comprising one or more magnetic fillers; and

an ink comprising one or more magnetic fillers.

4. The semiconductor package of claim 3 , wherein the dielectric layer is formed from a dielectric material lacking magnetic fillers.

5. The semiconductor package of claim 1 , further comprising:

a solder resist composition on a bottom surface of the build-up layer;

one or more openings formed in the solder resist composition and the build-up layer below the raised pad structure; and

a magnetic material in at least one of the one or more openings, wherein the magnetic material comprises one or more of: an ink comprising one or more magnetic fillers; and a paste comprising one or more magnetic fillers.

6. The semiconductor package of claim 1 , further comprising:

a solder resist composition encapsulating the conductive structure and uncovered top surfaces of the magnetic bilayer structure;

one or more openings formed in the solder resist composition above the raised pad structure; and

a magnetic material in at least one of the one or more openings, wherein the magnetic material comprises one or more of: an ink comprising one or more magnetic fillers; and a paste comprising one or more magnetic fillers.

7. A semiconductor package, comprising:

a seed layer on a build-up layer;

a raised pad structure and a trace on the seed layer;

a magnetic bilayer structure on the raised pad structure and the trace, wherein the magnetic bilayer structure comprises a prepackaged structure that comprises a dielectric film laminated on a magnetic film, the magnetic film in direct contact with the raised pad structure and the trace, wherein a top surface of the magnetic layer is co-planar with a top surface of the raised pad structure;

a conductive via in an opening in the dielectric layer of the magnetic bilayer structure, the conductive via on a top surface of the raised pad structure; and

a conductive structure on the conductive via and on a portion of a top surface of the dielectric layer of the magnetic bilayer.

8. The semiconductor package of claim 7 , wherein the raised pad structure has a z-height that is larger than a z-height of the trace.

9. The semiconductor package of claim 7 , wherein the magnetic layer comprises one or more of:

a film comprising one or more magnetic fillers;

a paste comprising one or more magnetic fillers; and

an ink comprising one or more magnetic fillers.

10. The semiconductor package of claim 9 , wherein the dielectric layer is formed from a dielectric material lacking magnetic fillers.

11. The semiconductor package of claim 7 , further comprising:

a solder resist composition on a bottom surface of the build-up layer;

one or more openings formed in the solder resist composition and the build-up layer below the raised pad structure; and

a magnetic material in at least one of the one or more openings, wherein the magnetic material comprises one or more of: an ink comprising one or more magnetic fillers; and a paste comprising one or more magnetic fillers.

12. The semiconductor package of claim 7 , further comprising:

a solder resist composition encapsulating the conductive structure and uncovered top surfaces of the magnetic bilayer structure;

one or more openings formed in the solder resist composition above the raised pad structure; and

a magnetic material in at least one of the one or more openings, wherein the magnetic material comprises one or more of: an ink comprising one or more magnetic fillers; and a paste comprising one or more magnetic fillers.

13. A semiconductor package, comprising:

a seed layer on a build-up layer;

a raised pad structure and a trace on the seed layer;

a magnetic bilayer structure on the raised pad structure and the trace, wherein the magnetic bilayer structure comprises a magnetic layer and a dielectric layer, the magnetic layer in direct contact with the raised pad structure and the trace;

a conductive structure on the raised pad structure over a via;

a solder resist composition on a bottom surface of the build-up layer;

one or more openings formed in the solder resist composition and the build-up layer below the raised pad structure; and

a magnetic material in at least one of the one or more openings, wherein the magnetic material comprises one or more of: an ink comprising one or more magnetic fillers; and a paste comprising one or more magnetic fillers.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2018
From: DENG, YIKANG; ROSCH, JONATHAN; BROWN, ANDREW; ZHAO, JUNNAN
To: INTEL CORPORATION
Reel/Frame 045911/0946 →
Continuity (1)
Related Publication 20190287934A1 · Sep 19, 2019
Cited By (1)
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