Method of manufacturing semiconductor device
Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.
1. A method of manufacturing a semiconductor device, comprising:
(a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and
(b) performing a cycle a predetermined number of times to selectively form a first metal film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle comprising: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first metal-containing gas to the substrate, wherein (b-1) and (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to an aspect ratio of the groove.
2. The method of claim 1 , wherein the supply condition of the first reducing gas in (b-1) is adjusted such that an amount of the first reducing gas supplied to the upper portion is greater than that of the first reducing gas supplied, to the lower portion.
3. The method of claim 2 , wherein the amount of the first reducing gas supplied to the upper portion is greater than that of the first reducing gas which saturates an adsorption of the first reducing gas to the upper portion.
4. The method of claim 1 , wherein the supply condition of the first reducing gas in (b-1) is adjusted such that the first metal-containing gas reacts with an adsorption layer of the first reducing gas formed at the lower portion exclusive of the adsorption layer formed at the upper portion.
5. The method of claim 1 , wherein the supply condition of the first reducing gas comprises at least one of a flow rate, a duration of a supply and a partial pressure of the first reducing gas, and at least one of the flow rate, the duration and the partial pressure is decreased as the cycle is repeated.
6. The method of claim 1 , wherein the supply condition of the first reducing gas comprises at least one of a duration of a supply and a partial pressure of the first reducing gas, and at least one of the duration and the partial pressure is adjusted such that a product of the duration and the partial pressure is equal to or higher than a predetermined value.
7. The method of claim 1 , wherein (b-1) and (b-2) are alternately performed in (b).
8. The method of claim 1 , wherein a temperature of the substrate ranges from room temperature to 250° C.
9. The method of claim 1 , further comprising: (c) simultaneously supplying a second metal-containing gas and a second reducing gas to the substrate provided with the groove having the first metal film formed at the lower portion of the groove with the base film at the upper portion of the groove exposed to form a second metal film on the first metal film exclusive of the base film.
10. The method of claim 9 , wherein the first metal-containing gas is same as the second metal-containing gas.
11. The method of claim 9 , wherein the first reducing gas differs from the second reducing gas.
12. The method of claim 9 , wherein an electrical resistivity of the second metal film is lower than that of the first metal film.