Elastic wave device
An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. An absolute value of a thermal expansion coefficient of the piezoelectric substrate is larger than an absolute value of a thermal expansion coefficient of the supporting substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the first acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the third acoustic impedance layer and the fourth acoustic impedance layer.
1. An elastic wave device comprising:
a supporting substrate;
an acoustic multilayer film on the supporting substrate;
a piezoelectric substrate on the acoustic multilayer film; and
an IDT electrode on the piezoelectric substrate;
wherein
an absolute value of a thermal expansion coefficient of the piezoelectric substrate is larger than an absolute value of a thermal expansion coefficient of the supporting substrate;
the acoustic multilayer film includes at least four acoustic impedance layers;
the at least four acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer;
the at least one low acoustic impedance layer and the at least one high acoustic impedance layer are laminated alternately; and
a bonding layer is provided at any position in a range of from inside a first acoustic impedance layer of the at least four acoustic impedance layers from the piezoelectric substrate side towards the supporting substrate side, to an interface between a third acoustic impedance layer and a fourth acoustic impedance layer of the at least four acoustic impedance layers.
2. The elastic wave device according to claim 1 , wherein the bonding layer is provided inside one acoustic impedance layer selected from the first acoustic impedance layer, the second acoustic impedance layer, and the third acoustic impedance layer of the at least four acoustic impedance layers from the piezoelectric substrate side towards the supporting substrate side.
3. The elastic wave device according to claim 1 , wherein the bonding layer is provided at an interface between any two adjacent acoustic impedance layers among the at least four acoustic impedance layers from the piezoelectric substrate side toward the supporting substrate side.
4. The elastic wave device according to claim 1 , wherein a plate wave of an S 0 mode, an A 0 mode, an A 1 mode, an SH 0 mode, or an SH 1 mode is used as a propagating elastic wave.
5. The elastic wave device according to claim 1 , wherein the bonding layer has a thickness of about 5 nm or less.
6. The elastic wave device according to claim 1 , wherein the bonding layer also defines and functions as an insulating layer.
7. The elastic wave device according to claim 1 , wherein the supporting substrate is made of glass or Si, and the piezoelectric substrate is made of LiNbO 3 or LiTaO 3 .
8. The elastic wave device according to claim 1 , wherein the low acoustic impedance layer is made of silicon oxide.
9. The elastic wave device according to claim 1 , wherein the high acoustic impedance layer is made of tungsten, platinum, tantalum, silicon nitride, or aluminum nitride.
10. The elastic wave device according to claim 1 , wherein a thickness of each of the acoustic impedance layers is in a range of about ¼ of a thickness of the piezoelectric substrate to about 10 times the thickness of the piezoelectric substrate.
11. The elastic wave device according to claim 1 , wherein the bonding layer is made of a Ti oxide or a Ti nitride.
12. The elastic wave device according to claim 1 , wherein the IDT electrode is made of at least one of Al, Cu, Pt, Au, Ag, Ti, Ni, Cr, Mo, or W, or an alloy primarily including any of Al, Cu, Pt, Au, Ag, Ti, Ni, Cr, Mo, or W.
13. The elastic wave device according to claim 1 , wherein the IDT electrode is made of Al.
14. The elastic wave device according to claim 1 , wherein the IDT electrode is defined by a multilayer metal film including a Ti layer and an AlCu that are stacked on one another.
15. The elastic wave device according to claim 1 , further comprising electrode lands provided on the piezoelectric substrate.
16. The elastic wave device according to claim 15 , wherein the electrode layers are defined by a multilayer metal film including a Ti layer and an Al layer that are stacked on one another.
17. The elastic wave device according to claim 1 , wherein a thickness of the IDT electrode is about 10 nm to about 2000 nm.
18. The elastic wave device according to claim 15 , wherein a thickness of each of the electrode lands is about 100 nm to about 2000 nm.