Elastic wave device
An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The at least four acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the acoustic impedance layer, which is the fourth acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the acoustic multilayer film and the supporting substrate.
1. An elastic wave device comprising:
a supporting substrate;
an acoustic multilayer film on the supporting substrate;
a piezoelectric substrate on the acoustic multilayer film; and
an IDT electrode on the piezoelectric substrate;
wherein
the acoustic multilayer film includes at least four acoustic impedance layers;
the at least four acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer; and
a bonding layer provided inside a fourth acoustic impedance layer of the at least four acoustic impedance layers from the piezoelectric substrate side towards the supporting substrate side.
2. The elastic wave device according to claim 1 , wherein
the acoustic multilayer film includes at least five acoustic impedance layers.
3. The elastic wave device according to claim 1 , wherein a plate wave of an S 0 mode, an A 0 mode, an A 1 mode, an SH 0 mode, or an SH 1 mode is used as a propagating elastic wave.
4. The elastic wave device according to claim 1 , wherein the low acoustic impedance layer is made of silicon oxide.
5. The elastic wave device according to claim 1 , wherein the high acoustic impedance layer is made of platinum or silicon nitride.
6. The elastic wave device according to claim 1 , wherein the supporting substrate is made of Si.
7. The elastic wave device according to claim 1 , wherein a thickness of each of the acoustic impedance layers is in a range of about 1/10 of a thickness of the piezoelectric substrate to about 4 times the thickness of the piezoelectric substrate.
8. The elastic wave device according to claim 1 , wherein the bonding layer is made of a Ti oxide.
9. The elastic wave device according to claim 1 , wherein the IDT electrode is made of at least one of Al, Cu, Pt, Au, Ag, Ti, Ni, Cr, Mo, or W, or an alloy primarily including any of Al, Cu, Pt, Au, Ag, Ti, Ni, Cr, Mo, or W.
10. The elastic wave device according to claim 1 , wherein the IDT electrode is made of Al.
11. The elastic wave device according to claim 1 , wherein the IDT electrode is defined by a multilayer metal film including a Ti layer and an AlCu that are stacked on one another.
12. The elastic wave device according to claim 1 , further comprising electrode lands provided on the piezoelectric substrate.
13. The elastic wave device according to claim 12 , wherein the electrode layers are defined by a multilayer metal film including a Ti layer and an Al layer that are stacked on one another.
14. The elastic wave device according to claim 1 , wherein a thickness of the IDT electrode is about 10 nm to about 2000 nm.
15. The elastic wave device according to claim 12 , wherein a thickness of each of the electrode lands is about 100 nm to about 2000 nm.
16. An elastic wave device comprising:
a supporting substrate;
an acoustic multilayer film on the supporting substrate;
a piezoelectric substrate on the acoustic multilayer film; and
an IDT electrode on the piezoelectric substrate; wherein
the acoustic multilayer film includes at least five acoustic impedance layers;
the at least five acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer; and
the bonding layer is provided inside one of the at least five acoustic impedance layers on the supporting substrate side with respect to a fourth acoustic impedance layer of the at least five acoustic impedance layers from the piezoelectric substrate side towards the supporting substrate side.