Fan-out semiconductor package
A semiconductor package includes a wiring portion including an insulating layer, conductive patterns disposed on the insulating layer, and conductive vias penetrating through the insulating layer and connected to the conductive patterns, a semiconductor chip disposed on the wiring portion, an encapsulant disposed on the wiring portion and encapsulating at least a portion of the semiconductor chip, and a metal layer disposed on the semiconductor chip and the encapsulant and having a thickness of 10 μm to 70 μm.
1. A semiconductor package comprising:
a wiring portion including an insulating layer, conductive patterns disposed on the insulating layer, and conductive vias penetrating through the insulating layer and connected to the conductive patterns;
a plurality of semiconductor chips disposed on the wiring portion and including an active surface on which connection pads are disposed, and an inactive surface opposite to the active surface;
an encapsulant disposed on the wiring portion and encapsulating at least a portion of the plurality of the semiconductor chips; and
a metal layer disposed on the plurality of the semiconductor chips and the encapsulant and having a thickness of 10 μm to 70 μm,
wherein each of the inactive surfaces of the plurality of semiconductor chips is exposed from the encapsulant,
each of the inactive surfaces of the plurality of semiconductor chips is coplanar with an upper surface of the encapsulant,
the metal layer has an integrated structure covering each of the inactive surfaces of the plurality of semiconductor chips,
the metal layer is in direct contact with the upper surface of the encapsulant and each of the inactive surfaces of the plurality of semiconductor chips without having an adhesive layer interposed therebetween, and
the metal layer is a copper (Cu) plating layer.
2. The semiconductor package of claim 1 , wherein the metal layer is made of the same material as the conductive patterns.
3. The semiconductor package of claim 1 , wherein the thickness of the metal layer is 30 μm to 50 μm.
4. The semiconductor package of claim 1 , wherein the encapsulant is made of a prepreg.
5. The semiconductor package of claim 1 , wherein the insulating layer is made of a photosensitive resin.
6. The semiconductor package of claim 1 , further comprising a passivation layer having openings exposing portions of the conductive patterns,
wherein at least one of the openings is disposed in a fan-out region.
7. The semiconductor package of claim 1 , wherein the metal layer is electrically isolated from the conductive patterns and connection pads of the semiconductor chips.
8. The semiconductor package of claim 1 , wherein the metal layer extends across entire upper surfaces of the semiconductor chips and the encapsulant.
9. The semiconductor package of claim 1 , wherein the metal layer has a substantially uniform thickness.