IP Library › Patent Application 15926499
Patent Application
App. No. 15/926,499

LASER DIODE MODULE

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Quick Facts
Patent No.
US None
App. No.
15/926,499
Abstract

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

Claims (78)

1 . A laser diode module comprising:

a first semiconductor die including at least one electronic switch; and

a second semiconductor die including at least one laser diode,

wherein the second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch, the laser diode.

2 . The laser diode module of claim 1 , further comprising:

a third semiconductor die including at least one buffer capacitor; the third semiconductor die being bonded on the first semiconductor die using a chip-on-chip connecting technology.

3 . The laser diode module of claim 1 ,

wherein the first semiconductor die further includes at least one driver circuit coupled to the electronic switch and configured to drive the electronic switch on and off.

4 . The laser diode module of claim 1 ,

wherein the second semiconductor die has two electrodes on the same side and is flip-chip mounted on the first semiconductor die.

5 . The laser diode module of claim 2 ,

wherein the third semiconductor die has two electrodes on the same side and is flip-chip mounted on the first semiconductor die.

6 . The laser diode module of claim 1 ,

wherein the second semiconductor die has a first electrode on a top side and a second electrode on a bottom side of the second semiconductor die, the second electrode being bonded to the first semiconductor die using chip-on-chip connecting technology and the first electrode being connected to the first semiconductor die using a clip or a bond wire.

7 . The laser diode module of claim 1 ,

wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal.

8 . The laser diode module of claim 2 ,

wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal, and

wherein the buffer capacitor is connected between a supply terminal and a ground terminal.

9 . The laser diode module of claim 1 , further comprising:

wherein the first semiconductor die includes at least one buffer capacitor.

10 . The laser diode module of claim 1 , further comprising:

a lead frame, on which the first semiconductor die is attached.

11 . The laser diode module of claim 10 ,

wherein the first semiconductor die is flip-chip mounted on the lead frame without using bond wires.

12 . The laser diode module of claim 10 , further comprising:

at least one capacitor attached on the lead-frame.

13 . A laser diode module comprising:

a lead frame;

a first semiconductor die including at least one electronic switch and attached to the lead-frame;

at least one capacitor attached to the lead frame; and

a second semiconductor die including at least one laser diode, the second semiconductor die being arranged between the lead frame and a metal cap or a metal clip, so that a bottom side of the second semiconductor die contacts the lead frame and a top side of the second semiconductor die contacts the clip or the metal cap.

14 . The laser diode module of claim 13 ,

wherein the first semiconductor die is flip-chip mounted on the lead frame without using bond wires.

15 . The laser diode module of claim 13 ,

wherein the at least one capacitor is surface mounted on the lead frame without using bond wires.

16 . A laser diode module comprising:

a first semiconductor die including at least one electronic switch;

a second semiconductor die including at least one laser diode; and

a third semiconductor die including at least one buffer capacitor,

wherein the first and the third semiconductor die are embedded in one chip package and the second semiconductor die is a bare die bonded to a surface of the chip package.

17 . The laser diode module of claim 16 ,

wherein the chip package is an enhanced wafer level ball grid array (eWLB) package.

18 . The laser diode module of claim 16 ,

wherein the second semiconductor is soldered solder pads arranged either on the top side or the bottom side of the chip package.

19 . The laser diode module of any of claim 16 ,

wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal, and

wherein the buffer capacitor is connected between a supply terminal and a ground terminal.

20 . A laser diode module comprising:

a first semiconductor die including at least one electronic switch; and

a second semiconductor die including at least one laser diode,

wherein the first semiconductor die and the second semiconductor die are bare dies embedded in a circuit board.

21 . The laser diode module of claim 20 further comprising:

a third semiconductor die including at least one buffer capacitor, the third semiconductor die being embedded in the circuit board.

22 . The laser diode module of claim 20 ,

wherein a buffer capacitor is included in the first semiconductor die.

23 . The laser diode module of claim 22 ,

wherein the buffer capacitor is configured to buffer a supply voltage.

24 . The laser diode module of any of claim 20 , further comprising:

a fourth semiconductor chip including a micro-scanning mirror.

25 . The laser diode module of any of claim 20 ,

wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal.

26 . The laser diode module of claim 21 ,

wherein the electronic switch and the laser diode are connected in series between a supply terminal and a ground terminal, and

wherein the buffer capacitor is connected between a supply terminal and a ground terminal.

27 . The laser diode module of claim 21 ,

wherein the third semiconductor die is arranged on a first metallization layer of the circuit board.

28 . The laser diode module of any of claim 20 ,

wherein the second semiconductor die is arranged between a first metallization layer and a second metallization layer of the circuit board.

29 . The laser diode module of claim 28 ,

wherein the first semiconductor die is arranged between the second metallization layer and a third metallization layer of the circuit board.

30 . A laser diode module comprising:

a first semiconductor die including at least one electronic switch; and

a second semiconductor die including at least one laser diode,

wherein the first semiconductor die is a bare die embedded in an intermediate level of a circuit board, and

wherein the second semiconductor die is arranged in a top or a bottom level of the circuit board.

31 . The laser diode module of claim 30 , further comprising:

at least one buffer capacitor embedded in an intermediate level of a circuit board.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2018
From: GALVANO, MAURIZIO; FURLAN, GIANMARIA; LOGIUDICE, ANDREA; MIGNOLI, FRANCO
To: INFINEON TECHNOLOGIES AG
Reel/Frame 045290/0966 →